Abstract
We use sALD to deposit IGZO and Al2O3 layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (d200oC). We attain mobility of 8 cm2/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the International Display Workshops |
| Publisher | International Display Workshops |
| Pages | 489-492 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781713806301 |
| DOIs | |
| Publication status | Published - 2019 |
| Event | 26th International Display Workshops (IDW 2019) - Sapporo, Japan Duration: 27 Nov 2019 → 29 Nov 2019 Conference number: 26 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 26 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 26th International Display Workshops (IDW 2019) |
|---|---|
| Abbreviated title | IDW 2019 |
| Country/Territory | Japan |
| City | Sapporo |
| Period | 27/11/19 → 29/11/19 |
Keywords
- Display
- IGZO
- Large-area processing
- Spatial atomic layer deposition
- Thin-film transistors
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