Low-temperature IGZO technology on transparent plastic foil by atmospheric spatial atomic layer deposition

  • Corné Frijters
  • , Roy Verbeek
  • , Gerard de Haas
  • , Tung Huei Ke
  • , Erwin Vandenplas
  • , Marc Ameys
  • , Jan Laurens van der Steen
  • , Gerwin Gelinck
  • , Eric Meulenkamp
  • , Paul Poodt
  • , Auke Kronemeijer
  • , Ilias Katsouras

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    We use sALD to deposit IGZO and Al2O3 layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (d200oC). We attain mobility of 8 cm2/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.

    Original languageEnglish
    Title of host publicationProceedings of the International Display Workshops
    PublisherInternational Display Workshops
    Pages489-492
    Number of pages4
    ISBN (Electronic)9781713806301
    DOIs
    Publication statusPublished - 2019
    Event26th International Display Workshops (IDW 2019) - Sapporo, Japan
    Duration: 27 Nov 201929 Nov 2019
    Conference number: 26

    Publication series

    NameProceedings of the International Display Workshops
    Volume26
    ISSN (Print)1883-2490

    Conference

    Conference26th International Display Workshops (IDW 2019)
    Abbreviated titleIDW 2019
    Country/TerritoryJapan
    CitySapporo
    Period27/11/1929/11/19

    Keywords

    • Display
    • IGZO
    • Large-area processing
    • Spatial atomic layer deposition
    • Thin-film transistors

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