Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

M. Nag; R.N. Muller; S. Steudel; S. Smout; A. Bhoolokam; K. Myny; S. Schols; J. Genoe; B. Cobb; Abhishek Kumar; G.H. Gelinck; Y. Fukui; G. Groeseneken; P. Heremans

doi:10.1080/15980316.2015.1043359

Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

M. Nag, R.N. Muller, S. Steudel, S. Smout, A. Bhoolokam, K. Myny, S. Schols, J. Genoe, B. Cobb, Abhishek Kumar, G.H. Gelinck, Y. Fukui, G. Groeseneken, P. Heremans

Molecular Materials and Nanosystems

Research output: Contribution to journal › Article › Academic › peer-review

27 Citations (Scopus)

Abstract

We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (R_SHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μ_FE) of 12.0 cm²/(V s), a subthreshold slope (SS⁻¹) of 0.4 V/decade, and an on/off current ratio (I_ON/OFF) above 10⁸.

Original language	English
Pages (from-to)	111-117
Number of pages	7
Journal	Journal of Information Display
Volume	16
Issue number	2
DOIs	https://doi.org/10.1080/15980316.2015.1043359
Publication status	Published - 3 Apr 2015

Access to Document

10.1080/15980316.2015.1043359

Cite this

Nag, M., Muller, R. N., Steudel, S., Smout, S., Bhoolokam, A., Myny, K., Schols, S., Genoe, J., Cobb, B., Kumar, A., Gelinck, G. H., Fukui, Y., Groeseneken, G., & Heremans, P. (2015). Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors. Journal of Information Display, 16(2), 111-117. https://doi.org/10.1080/15980316.2015.1043359

@article{23834190a5fc44deb40b979cef9cb4fd,

title = "Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors",

abstract = "We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108.",

author = "M. Nag and R.N. Muller and S. Steudel and S. Smout and A. Bhoolokam and K. Myny and S. Schols and J. Genoe and B. Cobb and Abhishek Kumar and G.H. Gelinck and Y. Fukui and G. Groeseneken and P. Heremans",

year = "2015",

month = apr,

day = "3",

doi = "10.1080/15980316.2015.1043359",

language = "English",

volume = "16",

pages = "111--117",

journal = "Journal of Information Display",

issn = "1598-0316",

publisher = "Taylor and Francis Ltd.",

number = "2",

}

Nag, M, Muller, RN, Steudel, S, Smout, S, Bhoolokam, A, Myny, K, Schols, S, Genoe, J, Cobb, B, Kumar, A, Gelinck, GH, Fukui, Y, Groeseneken, G & Heremans, P 2015, 'Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors', Journal of Information Display, vol. 16, no. 2, pp. 111-117. https://doi.org/10.1080/15980316.2015.1043359

TY - JOUR

T1 - Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

AU - Nag, M.

AU - Muller, R.N.

AU - Steudel, S.

AU - Smout, S.

AU - Bhoolokam, A.

AU - Myny, K.

AU - Schols, S.

AU - Genoe, J.

AU - Cobb, B.

AU - Kumar, Abhishek

AU - Gelinck, G.H.

AU - Fukui, Y.

AU - Groeseneken, G.

AU - Heremans, P.

PY - 2015/4/3

Y1 - 2015/4/3

N2 - We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108.

AB - We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108.

UR - http://www.scopus.com/inward/record.url?scp=84933278697&partnerID=8YFLogxK

U2 - 10.1080/15980316.2015.1043359

DO - 10.1080/15980316.2015.1043359

M3 - Article

AN - SCOPUS:84933278697

SN - 1598-0316

VL - 16

SP - 111

EP - 117

JO - Journal of Information Display

JF - Journal of Information Display

IS - 2

ER -

Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this