Skip to main navigation Skip to search Skip to main content

Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems

  • K.T. Mazon
  • , G.-Q. Hai
  • , M.T. Lee
  • , P.M. Koenraad
  • , A.F.W. Stadt, van de

Research output: Contribution to journalArticleAcademicpeer-review

385 Downloads (Pure)

Abstract

We present a theoretical and experimental study on the low-temperature electron mobilities due to ionized impurity scattering in a multisubband quasi-two-dimensional semiconductor system. The scattering rate is obtained from the solution the Lippmann-Schwinger equation in momentum space and the screening is considered within the random-phase approximation. A quantitative agreement is reached between the theoretical and experimental results for both the quantum and transport mobilities.
Original languageEnglish
Article number193312
Pages (from-to)193312-1/4
JournalPhysical Review B
Volume70
Issue number19
DOIs
Publication statusPublished - 2004

Fingerprint

Dive into the research topics of 'Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems'. Together they form a unique fingerprint.

Cite this