Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems

K.T. Mazon, G.-Q. Hai, M.T. Lee, P.M. Koenraad, A.F.W. Stadt, van de

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Abstract

We present a theoretical and experimental study on the low-temperature electron mobilities due to ionized impurity scattering in a multisubband quasi-two-dimensional semiconductor system. The scattering rate is obtained from the solution the Lippmann-Schwinger equation in momentum space and the screening is considered within the random-phase approximation. A quantitative agreement is reached between the theoretical and experimental results for both the quantum and transport mobilities.
Original languageEnglish
Article number193312
Pages (from-to)193312-1/4
JournalPhysical Review B
Volume70
Issue number19
DOIs
Publication statusPublished - 2004

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