Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

B. Macco, M. Vos, N.F.W. Thissen, A.A. Bol, W.M.M. Kessels

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The preparation of high-quality molybdenum oxide (MoOx) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO3, and free of other elements apart from hydrogen (&11 at%). The films have a high transparency in the visible region and their compatibility with a-Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoOx in hole-selective contacts for silicon heterojunction solar cells.
Original languageEnglish
Pages (from-to)393-396
JournalPhysica Status Solidi : Rapid Research Letters
Issue number7
Publication statusPublished - 2015


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