Low resistive, ohmic contacts to indium tin oxide

C. H.L. Weijtens; P. A.C. van Loon

doi:10.1149/1.2086330

Low resistive, ohmic contacts to indium tin oxide

C. H.L. Weijtens
, P. A.C. van Loon

Research output: Contribution to journal › Article › Academic › peer-review

10 Citations (Scopus)

Abstract

TiW and TiW(N) have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of 1.5 · 10⁻⁶ Ω-cm² has been obtained after alloying at 450° or 500°C in N₂/20% H₂.

Original language	English
Pages (from-to)	3928-3930
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	137
Issue number	12
DOIs	https://doi.org/10.1149/1.2086330
Publication status	Published - 1 Jan 1990
Externally published	Yes

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10.1149/1.2086330

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title = "Low resistive, ohmic contacts to indium tin oxide",

abstract = "TiW and TiW(N) have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of 1.5 · 10−6 Ω-cm2 has been obtained after alloying at 450° or 500°C in N2/20\% H2.",

author = "Weijtens, \{C. H.L.\} and \{van Loon\}, \{P. A.C.\}",

year = "1990",

month = jan,

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doi = "10.1149/1.2086330",

language = "English",

volume = "137",

pages = "3928--3930",

journal = "Journal of the Electrochemical Society",

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number = "12",

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TY - JOUR

T1 - Low resistive, ohmic contacts to indium tin oxide

AU - Weijtens, C. H.L.

AU - van Loon, P. A.C.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - TiW and TiW(N) have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of 1.5 · 10−6 Ω-cm2 has been obtained after alloying at 450° or 500°C in N2/20% H2.

AB - TiW and TiW(N) have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of 1.5 · 10−6 Ω-cm2 has been obtained after alloying at 450° or 500°C in N2/20% H2.

UR - https://www.scopus.com/pages/publications/0025565307

U2 - 10.1149/1.2086330

DO - 10.1149/1.2086330

M3 - Article

AN - SCOPUS:0025565307

SN - 0013-4651

VL - 137

SP - 3928

EP - 3930

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Low resistive, ohmic contacts to indium tin oxide

Abstract

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