Abstract
TiW and TiW(N) have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of 1.5 · 10−6 Ω-cm2 has been obtained after alloying at 450° or 500°C in N2/20% H2.
Original language | English |
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Pages (from-to) | 3928-3930 |
Number of pages | 3 |
Journal | Journal of the Electrochemical Society |
Volume | 137 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Jan 1990 |
Externally published | Yes |