Low resistive, ohmic contacts to indium tin oxide

C. H.L. Weijtens, P. A.C. van Loon

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Abstract

TiW and TiW(N) have been employed as barrier layers to obtain low resistive, ohmic contacts between ITO and Al or Al/Si. A specific contact resistance of 1.5 · 10−6 Ω-cm2 has been obtained after alloying at 450° or 500°C in N2/20% H2.

Original languageEnglish
Pages (from-to)3928-3930
Number of pages3
JournalJournal of the Electrochemical Society
Volume137
Issue number12
DOIs
Publication statusPublished - 1 Jan 1990
Externally publishedYes

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