Low resistance metal interconnection for direct wafer bonding of electronic to photonic ICs

A. Meighan, M.J. Wale, T. de Vries, E. Smalbrugge, K.A. Williams

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Abstract

Wafer scale co-integration of the EICs to the PICs using the adhesion bonding technique can open up new opportunities for improved performance, power efficiency and manufacturability. Benzocyclobutene (BCB) polymer is an appropriate candidate for the bonding material owing to its adhesion quality, low dielectric constant and compatibility with Si and InP industries. In this paper, we present a low resistance metal interconnection technique in the wafer scale for carrying the high speed RF signals. The design concept is supported by measurements.
Original languageEnglish
Title of host publicationProceedings of the 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, November 27-28, 2017, Delft, Netherlands
Pages1-4
Publication statusPublished - 2017
Event22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Netherlands
Duration: 27 Nov 201728 Nov 2017
https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70

Conference

Conference22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter
CountryNetherlands
CityDelft
Period27/11/1728/11/17
Internet address

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