Low pressure chemical vapour deposition of polycrystalline silicon: Validation and assessment of reactor models

The layer thickness of polycrystalline silicon grown in a commercial LPCVD reactor at 25–50 and 850–950 K is accurately simulated with a one-dimensional two-zone model without adjusting any model parameter and applying independently determined reaction kinetics. The radial non-uniformity of the layer thickness is limited to 4%. At a surface-to-volume ratio of 200 m−1 up to 20% of the growth originates from silylene and disilane. This contribution is the cause of the radial non-uniformity.