Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

L. Shen; P.J. Veldhoven, van; Y. Jiao; V.M. Dolores Calzadilla; J.J.G.M. van der Tol; G.C. Roelkens; M.K. Smit

Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

L. Shen
, P.J. Veldhoven, van
, Y. Jiao
, V.M. Dolores Calzadilla
, J.J.G.M. van der Tol
, G.C. Roelkens
, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

105 Downloads (Pure)

Original language	English
Title of host publication	The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	177-178
Number of pages	2
Publication status	Published - 2015
Event	27th International Conference on Indium Phosphide and Related Materials (IPRM 2015) - Santa Barbara, United States Duration: 28 Jun 2015 → 2 Jul 2015 Conference number: 27

Conference

Conference	27th International Conference on Indium Phosphide and Related Materials (IPRM 2015)
Abbreviated title	IPRM 2015
Country/Territory	United States
City	Santa Barbara
Period	28/06/15 → 2/07/15
Other	Event co-located with the 42nd International Symposium on Compound Semiconductors (ISCS 2015) under the umbrella of the Compound Semiconductor Week 2015 (CSW 2015)

Access to Document

publisher versionFinal published version, 252 KB

Cite this

Shen, L., Veldhoven, van, P. J., Jiao, Y., Dolores Calzadilla, V. M., van der Tol, J. J. G. M., Roelkens, G. C., & Smit, M. K. (2015). Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. In The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA (pp. 177-178). Institute of Electrical and Electronics Engineers.

@inproceedings{a2472ca2a32d4702969f0810f4ff3e77,

title = "Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices",

author = "L. Shen and \{Veldhoven, van\}, P.J. and Y. Jiao and \{Dolores Calzadilla\}, V.M. and \{van der Tol\}, J.J.G.M. and G.C. Roelkens and M.K. Smit",

year = "2015",

language = "English",

pages = "177--178",

booktitle = "The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "27th International Conference on Indium Phosphide and Related Materials (IPRM 2015), IPRM 2015 ; Conference date: 28-06-2015 Through 02-07-2015",

}

Shen, L, Veldhoven, van, PJ, Jiao, Y , Dolores Calzadilla, VM , van der Tol, JJGM, Roelkens, GC & Smit, MK 2015, Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. in The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 177-178, 27th International Conference on Indium Phosphide and Related Materials (IPRM 2015), Santa Barbara, California, United States, 28/06/15.

Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. / Shen, L.; Veldhoven, van, P.J.; Jiao, Y. et al.
The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA. Piscataway: Institute of Electrical and Electronics Engineers, 2015. p. 177-178.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

AU - Shen, L.

AU - Veldhoven, van, P.J.

AU - Jiao, Y.

AU - Dolores Calzadilla, V.M.

AU - van der Tol, J.J.G.M.

AU - Roelkens, G.C.

AU - Smit, M.K.

N1 - Conference code: 27

PY - 2015

Y1 - 2015

M3 - Conference contribution

SP - 177

EP - 178

BT - The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 27th International Conference on Indium Phosphide and Related Materials (IPRM 2015)

Y2 - 28 June 2015 through 2 July 2015

ER -

Shen L, Veldhoven, van PJ, Jiao Y , Dolores Calzadilla VM , van der Tol JJGM, Roelkens GC et al. Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. In The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA. Piscataway: Institute of Electrical and Electronics Engineers. 2015. p. 177-178