Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

L. Shen; P.J. Veldhoven, van; Y. Jiao; V.M. Dolores Calzadilla; J.J.G.M. van der Tol; G.C. Roelkens; M.K. Smit

Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

L. Shen, P.J. Veldhoven, van, Y. Jiao, V.M. Dolores Calzadilla, J.J.G.M. van der Tol, G.C. Roelkens, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Original language	English
Title of host publication	The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	177-178
Number of pages	2
Publication status	Published - 2015
Event	27th International Conference on Indium Phosphide and Related Materials (IPRM 2015) - Santa Barbara, United States Duration: 28 Jun 2015 → 2 Jul 2015 Conference number: 27

Conference

Conference	27th International Conference on Indium Phosphide and Related Materials (IPRM 2015)
Abbreviated title	IPRM 2015
Country/Territory	United States
City	Santa Barbara
Period	28/06/15 → 2/07/15
Other	Event co-located with the 42nd International Symposium on Compound Semiconductors (ISCS 2015) under the umbrella of the Compound Semiconductor Week 2015 (CSW 2015)

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Cite this

Shen, L., Veldhoven, van, P. J., Jiao, Y., Dolores Calzadilla, V. M., van der Tol, J. J. G. M., Roelkens, G. C., & Smit, M. K. (2015). Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. In The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA (pp. 177-178). Institute of Electrical and Electronics Engineers.

@inproceedings{a2472ca2a32d4702969f0810f4ff3e77,

title = "Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices",

author = "L. Shen and {Veldhoven, van}, P.J. and Y. Jiao and {Dolores Calzadilla}, V.M. and {van der Tol}, J.J.G.M. and G.C. Roelkens and M.K. Smit",

year = "2015",

language = "English",

pages = "177--178",

booktitle = "The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "27th International Conference on Indium Phosphide and Related Materials (IPRM 2015), IPRM 2015 ; Conference date: 28-06-2015 Through 02-07-2015",

}

Shen, L, Veldhoven, van, PJ, Jiao, Y , Dolores Calzadilla, VM , van der Tol, JJGM, Roelkens, GC & Smit, MK 2015, Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. in The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 177-178, 27th International Conference on Indium Phosphide and Related Materials (IPRM 2015), Santa Barbara, California, United States, 28/06/15.

Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. / Shen, L.; Veldhoven, van, P.J.; Jiao, Y. et al.
The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA. Piscataway: Institute of Electrical and Electronics Engineers, 2015. p. 177-178.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

AU - Shen, L.

AU - Veldhoven, van, P.J.

AU - Jiao, Y.

AU - Dolores Calzadilla, V.M.

AU - van der Tol, J.J.G.M.

AU - Roelkens, G.C.

AU - Smit, M.K.

N1 - Conference code: 27

PY - 2015

Y1 - 2015

M3 - Conference contribution

SP - 177

EP - 178

BT - The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 27th International Conference on Indium Phosphide and Related Materials (IPRM 2015)

Y2 - 28 June 2015 through 2 July 2015

ER -

Shen L, Veldhoven, van PJ, Jiao Y , Dolores Calzadilla VM , van der Tol JJGM, Roelkens GC et al. Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices. In The 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA. Piscataway: Institute of Electrical and Electronics Engineers. 2015. p. 177-178