Low optical loss ohmic contacts on heavily doped N-type InGaAs for InP membrane devices

L. Shen, P.J. Veldhoven, van, Y. Jiao, V.M. Dolores Calzadilla, J.J.G.M. van der Tol, G.C. Roelkens, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Original languageEnglish
Title of host publicationThe 27th International Conference on Indium Phosphide and Related Materials (IPRM), 28 June - 2 July 2015, Santa Barbara, USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages177-178
Number of pages2
Publication statusPublished - 2015
Event27th International Conference on Indium Phosphide and Related Materials (IPRM 2015) - Santa Barbara, United States
Duration: 28 Jun 20152 Jul 2015
Conference number: 27

Conference

Conference27th International Conference on Indium Phosphide and Related Materials (IPRM 2015)
Abbreviated titleIPRM 2015
CountryUnited States
CitySanta Barbara
Period28/06/152/07/15
OtherEvent co-located with the 42nd International Symposium on Compound Semiconductors (ISCS 2015) under the umbrella of the Compound Semiconductor Week 2015 (CSW 2015)

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