Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

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Abstract

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.
Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-7281-0080-7
DOIs
Publication statusPublished - 19 May 2019
EventCompound Semiconductor Week - Kasugano International Forum, Nara, Japan
Duration: 19 Jun 201923 Jun 2019

Conference

ConferenceCompound Semiconductor Week
Abbreviated titleCSW 2019
CountryJapan
CityNara
Period19/06/1923/06/19

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Keywords

  • Mach-Zehnder interferometer
  • microring resonator
  • photonic integrated circuit
  • propagation loss

Cite this

van Engelen, J., Reniers, S., Bolk, J., Williams, K., van der Tol, J., & Jiao, Y. (2019). Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819069] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2019.8819069