Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

Jorn van Engelen; Sander Reniers; Jeroen Bolk; Kevin Williams; Jos van der Tol; Yuqing Jiao

doi:10.1109/ICIPRM.2019.8819069

Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

Jorn van Engelen, Sander Reniers, Jeroen Bolk, Kevin Williams, Jos van der Tol, Yuqing Jiao

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

165 Downloads (Pure)

Abstract

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.

Original language	English
Title of host publication	2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-7281-0080-7
DOIs	https://doi.org/10.1109/ICIPRM.2019.8819069
Publication status	Published - 19 May 2019
Event	2019 Compound Semiconductor Week, CSW 2019 - Kasugano International Forum, Nara, Japan Duration: 19 Jun 2019 → 23 Jun 2019

Conference

Conference	2019 Compound Semiconductor Week, CSW 2019
Abbreviated title	CSW 2019
Country/Territory	Japan
City	Nara
Period	19/06/19 → 23/06/19

Keywords

Mach-Zehnder interferometer
microring resonator
photonic integrated circuit
propagation loss

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10.1109/ICIPRM.2019.8819069

Author versionFinal author version , 1.18 MB

Cite this

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title = "Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography",

abstract = "For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.",

keywords = "Mach-Zehnder interferometer, microring resonator, photonic integrated circuit, propagation loss",

author = "{van Engelen}, Jorn and Sander Reniers and Jeroen Bolk and Kevin Williams and {van der Tol}, Jos and Yuqing Jiao",

year = "2019",

month = may,

day = "19",

doi = "10.1109/ICIPRM.2019.8819069",

language = "English",

booktitle = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2019 Compound Semiconductor Week, CSW 2019, CSW 2019 ; Conference date: 19-06-2019 Through 23-06-2019",

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van Engelen, J, Reniers, S , Bolk, J , Williams, K , van der Tol, J & Jiao, Y 2019, Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819069, Institute of Electrical and Electronics Engineers, Piscataway, 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 19/06/19. https://doi.org/10.1109/ICIPRM.2019.8819069

Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography. / van Engelen, Jorn; Reniers, Sander ; Bolk, Jeroen et al.
2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Piscataway: Institute of Electrical and Electronics Engineers, 2019. 8819069.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

AU - van Engelen, Jorn

AU - Reniers, Sander

AU - Bolk, Jeroen

AU - Williams, Kevin

AU - van der Tol, Jos

AU - Jiao, Yuqing

PY - 2019/5/19

Y1 - 2019/5/19

N2 - For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.

AB - For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.

KW - Mach-Zehnder interferometer

KW - microring resonator

KW - photonic integrated circuit

KW - propagation loss

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U2 - 10.1109/ICIPRM.2019.8819069

DO - 10.1109/ICIPRM.2019.8819069

M3 - Conference contribution

BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2019 Compound Semiconductor Week, CSW 2019

Y2 - 19 June 2019 through 23 June 2019

ER -

Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

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Keywords

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