Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)
61 Downloads (Pure)

Abstract

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.
Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-7281-0080-7
DOIs
Publication statusPublished - 19 May 2019
EventCompound Semiconductor Week - Kasugano International Forum, Nara, Japan
Duration: 19 Jun 201923 Jun 2019

Conference

ConferenceCompound Semiconductor Week
Abbreviated titleCSW 2019
CountryJapan
CityNara
Period19/06/1923/06/19

Keywords

  • Mach-Zehnder interferometer
  • microring resonator
  • photonic integrated circuit
  • propagation loss

Fingerprint Dive into the research topics of 'Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography'. Together they form a unique fingerprint.

Cite this