Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

S. Bychikhin; D. Pogany; L.K.J. Vandamme; G. Meneghesso; E. Zanoni

doi:10.1063/1.1942628

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

S. Bychikhin, D. Pogany, L.K.J. Vandamme, G. Meneghesso, E. Zanoni

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Abstract

The low-frequency noise sources are investigated in as-prepared and aged GaN light-emitting diodes (LEDs). Accelerated aging is performed by thermal (300 h at 240 °C) and electrical forward-bias stressing (20 and 50 mA for 2500 h). At low currents I

Original language	English
Article number	123714
Pages (from-to)	123714-1/7
Number of pages	7
Journal	Journal of Applied Physics
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.1942628
Publication status	Published - 2005

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title = "Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes",

abstract = "The low-frequency noise sources are investigated in as-prepared and aged GaN light-emitting diodes (LEDs). Accelerated aging is performed by thermal (300 h at 240 °C) and electrical forward-bias stressing (20 and 50 mA for 2500 h). At low currents I",

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AU - Meneghesso, G.

AU - Zanoni, E.

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U2 - 10.1063/1.1942628

DO - 10.1063/1.1942628

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Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

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