Low-frequency noise in B-doped diamond grown by CVD

X.Y. Chen, G.J. Bauhuis

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Boron-doped diamond films were fabricated by hot filament-assisted chemical vapour deposition (CVD) on ( 10 0) and ( 1 10) natural diamond substrates. Low-frequency noise in such homoepitaxial films was measured at 300 K. l/f noise spectra were observed at low frequencies in all samples. A high level of the l/f noise was found in a poor quality film that was grown along the { 1 1 O] orientation. The interaction of carriers with boron level was informed by analysing the g-r noise. The noise parameter (II varies from 10m3 to 4 X 10-l for different orientations.
Original languageEnglish
Pages (from-to)759-762
Number of pages4
JournalSolid State Communications
Volume106
Issue number11
DOIs
Publication statusPublished - 1998

Fingerprint Dive into the research topics of 'Low-frequency noise in B-doped diamond grown by CVD'. Together they form a unique fingerprint.

Cite this