Abstract
This paper introduces a novel technique for simultaneous linearity and efficiency enhancement of class-D amplifiers by combining a low frequency sinusoid, known as dither, with a bandpass signal. The proposed technique improves the linearity due to dither averaging effect, and power efficiency, due to the reduction of reactive loss. The feasibility of the idea is verified through realization and measurement of a 65nm TSMC CMOS voltage mode class-D amplifier operating at 1 GHz. The drain efficiency is enhanced from 19.2 to 37 percent, while providing ACPR of -33dBc for the first adjacent WCDMA channel.
| Original language | English |
|---|---|
| Title of host publication | 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013 |
| Pages | 57-59 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States Duration: 21 Jan 2013 → 23 Jan 2013 |
Conference
| Conference | 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 |
|---|---|
| Country/Territory | United States |
| City | Austin, TX |
| Period | 21/01/13 → 23/01/13 |
Keywords
- class-D
- dither
- efficiency
- linearity
- load pull measurements
- PAPR
- Power amplifiers
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