Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

P.R.F. Rocha; H.L. Gomes; L.K.J. Vandamme; Qian Chen; A. Kiazadeh; D.M. Leeuw, de; S.C.J. Meskers

doi:10.1109/TED.2012.2204059

Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

P.R.F. Rocha, H.L. Gomes, L.K.J. Vandamme, Qian Chen, A. Kiazadeh, D.M. Leeuw, de, S.C.J. Meskers

Research output: Contribution to journal › Article › Academic › peer-review

14 Citations (Scopus)

2 Downloads (Pure)

Abstract

Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

Original language	English
Pages (from-to)	2483-2497
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	9
DOIs	https://doi.org/10.1109/TED.2012.2204059
Publication status	Published - 2012

Access to Document

10.1109/TED.2012.2204059

Cite this

@article{95976d7877cd4e6bae88a4d21385ff0b,

title = "Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.",

abstract = "Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.",

author = "P.R.F. Rocha and H.L. Gomes and L.K.J. Vandamme and Qian Chen and A. Kiazadeh and {Leeuw, de}, D.M. and S.C.J. Meskers",

year = "2012",

doi = "10.1109/TED.2012.2204059",

language = "English",

volume = "59",

pages = "2483--2497",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "9",

}

TY - JOUR

T1 - Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

AU - Rocha, P.R.F.

AU - Gomes, H.L.

AU - Vandamme, L.K.J.

AU - Chen, Qian

AU - Kiazadeh, A.

AU - Leeuw, de, D.M.

AU - Meskers, S.C.J.

PY - 2012

Y1 - 2012

N2 - Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

AB - Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

U2 - 10.1109/TED.2012.2204059

DO - 10.1109/TED.2012.2204059

M3 - Article

VL - 59

SP - 2483

EP - 2497

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 9

ER -

Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

Abstract

Access to Document

Fingerprint

Cite this