Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

P.R.F. Rocha, H.L. Gomes, L.K.J. Vandamme, Qian Chen, A. Kiazadeh, D.M. Leeuw, de, S.C.J. Meskers

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Abstract

Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.
Original languageEnglish
Pages (from-to)2483-2497
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume59
Issue number9
DOIs
Publication statusPublished - 2012

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