Low-energy implantations of decaborane (B10H14) ion clusters in silicon wafers

A.G. Dirks, P.H.L. Bancken, J. Politiek, N.E.B. Cowern, J.H.M. Snijders, J.G.M. van Berkum, M. A. Verheijen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

Abstract

Low-energy implantation with decaborane (B10H14) ion clusters is suitable for ultra-shallow junction formation. Using a high-voltage research implanter with a microwave ion source, decaborane implantation has been performed at energies in the range 2.8 to 440 keV, with doses up to 1014 decaborane/cm2(1015 B atoms/cm2). A study of the implantation damage shows that the number of displaced Si lattice atoms in the near-surface region is considerably larger for the decaborane implants than for the corresponding B+ implants. Ultra-shallow dopant profiles have been achieved by 2.8 keV B10H14 + implantation, equivalent to an energy of 255 eV per incoming B atom. In such a case the B peak concentration is located only a few atomic layers below the Si surface, and implantation damage is virtually absent. Transient enhanced diffusion effects during rapid thermal annealing were negligible, apart from the slight movement associated with migration of interstitial B atoms onto substitutional sites.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1167-1170
Number of pages4
Volume2
ISBN (Print)078034538X
DOIs
Publication statusPublished - 1 Dec 1999
Externally publishedYes
Event1998 International Conference on 'Ion Implantation Technology' (IIT'98) - Kyoto, Jpn
Duration: 22 Jun 199826 Jun 1998

Conference

Conference1998 International Conference on 'Ion Implantation Technology' (IIT'98)
CityKyoto, Jpn
Period22/06/9826/06/98

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