InP/InGaAs-MQW phase shifters with low absorption loss and low electroabsorption loss have been realized. Phase shift efficiency for TE-polarized light at lambda =1.55 mu m was 6.8 degrees V/sup -1/ mm/sup -1/ with negligible absorption loss and at lambda =1.51 mu m the efficiency was 8.9 degrees V/sup -1/ mm/sup -1/ with 5 dB/cm absorption loss
|Title of host publication||7th European Conference on Integrated Optics with Technical Exhibition : ECIO '95 : Regular and Invited Papers|
|Editors||L. Shi, L.H. Spiekman, X.J.M. Leijtens|
|Place of Publication||Delft, Netherlands|
|Publisher||Delft University Press|
|Publication status||Published - 1995|
Vreeburg, C. G. M., Smit, M. K., Bachmann, M., Kyburz, R., Krähenbühl, R., Gini, E., & Melchior, H. (1995). Low absorption InP/InGaAs-MQW phase shifters for optical switching. In L. Shi, L. H. Spiekman, & X. J. M. Leijtens (Eds.), 7th European Conference on Integrated Optics with Technical Exhibition : ECIO '95 : Regular and Invited Papers (pp. 225-228). Delft University Press.