Low absorption InP/InGaAs-MQW phase shifters for optical switching

C.G.M. Vreeburg, M.K. Smit, M. Bachmann, R. Kyburz, R. Krähenbühl, E. Gini, H. Melchior

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Abstract

InP/InGaAs-MQW phase shifters with low absorption loss and low electroabsorption loss have been realized. Phase shift efficiency for TE-polarized light at lambda =1.55 mu m was 6.8 degrees V/sup -1/ mm/sup -1/ with negligible absorption loss and at lambda =1.51 mu m the efficiency was 8.9 degrees V/sup -1/ mm/sup -1/ with 5 dB/cm absorption loss
Original languageEnglish
Title of host publication7th European Conference on Integrated Optics with Technical Exhibition : ECIO '95 : Regular and Invited Papers
EditorsL. Shi, L.H. Spiekman, X.J.M. Leijtens
Place of PublicationDelft, Netherlands
PublisherDelft University Press
Pages225-228
ISBN (Print)90-407-1111-9
Publication statusPublished - 1995

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    Vreeburg, C. G. M., Smit, M. K., Bachmann, M., Kyburz, R., Krähenbühl, R., Gini, E., & Melchior, H. (1995). Low absorption InP/InGaAs-MQW phase shifters for optical switching. In L. Shi, L. H. Spiekman, & X. J. M. Leijtens (Eds.), 7th European Conference on Integrated Optics with Technical Exhibition : ECIO '95 : Regular and Invited Papers (pp. 225-228). Delft University Press.