Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

A.J. Urbanczyk, J.G. Keizer, P.M. Koenraad, R. Nötzel

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Abstract

We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.
Original languageEnglish
Article number073103
Pages (from-to)073103-1/4
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number7
DOIs
Publication statusPublished - 2013

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