Abstract
We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.
Original language | English |
---|---|
Article number | 073103 |
Pages (from-to) | 073103-1/4 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2013 |