Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

A.J. Urbanczyk; J.G. Keizer; P.M. Koenraad; R. Nötzel

doi:10.1063/1.4792700

Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

A.J. Urbanczyk, J.G. Keizer, P.M. Koenraad, R. Nötzel

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

67 Downloads (Pure)

Abstract

We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

Original language	English
Article number	073103
Pages (from-to)	073103-1/4
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.4792700
Publication status	Published - 2013

Access to Document

10.1063/1.4792700

publishers versionFinal published version, 1.23 MB

Fingerprint Dive into the research topics of 'Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals'. Together they form a unique fingerprint.

Cite this

@article{608b993432914f69a2e4d8dd8427e0b1,

title = "Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals",

abstract = "We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.",

author = "A.J. Urbanczyk and J.G. Keizer and P.M. Koenraad and R. N{\"o}tzel",

year = "2013",

doi = "10.1063/1.4792700",

language = "English",

volume = "102",

pages = "073103--1/4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals. / Urbanczyk, A.J.; Keizer, J.G.; Koenraad, P.M.; Nötzel, R.

In: Applied Physics Letters, Vol. 102, No. 7, 073103, 2013, p. 073103-1/4.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Long wavelength (> 1.55 mu m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

AU - Urbanczyk, A.J.

AU - Keizer, J.G.

AU - Koenraad, P.M.

AU - Nötzel, R.

PY - 2013

Y1 - 2013

N2 - We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

AB - We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 mu m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

U2 - 10.1063/1.4792700

DO - 10.1063/1.4792700

M3 - Article

VL - 102

SP - 073103-1/4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 073103

ER -