Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

A. Fiore; U. Oesterle; R. Houdré; D. Vez; R.P. Stanley; M. Ilegems

Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

A. Fiore, U. Oesterle, R. Houdré, D. Vez, R.P. Stanley, M. Ilegems

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The authors demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at l~1.2 micro m with threshold current densities ~ 100 A/cm2. Maximum modal gains on the order of 5 cm-1 are deduced for a single QD sheet.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	166
Issue number	Compound Semiconductors 1999
Publication status	Published - 2000

Cite this

@article{3eed284e0f5040d5a731bce15b4fd921,

title = "Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs",

abstract = "The authors demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at l~1.2 micro m with threshold current densities ~ 100 A/cm2. Maximum modal gains on the order of 5 cm-1 are deduced for a single QD sheet.",

author = "A. Fiore and U. Oesterle and R. Houdr{\'e} and D. Vez and R.P. Stanley and M. Ilegems",

year = "2000",

language = "English",

volume = "166",

pages = "273--276",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

number = "Compound Semiconductors 1999",

}

TY - JOUR

T1 - Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

AU - Fiore, A.

AU - Oesterle, U.

AU - Houdré, R.

AU - Vez, D.

AU - Stanley, R.P.

AU - Ilegems, M.

PY - 2000

Y1 - 2000

N2 - The authors demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at l~1.2 micro m with threshold current densities ~ 100 A/cm2. Maximum modal gains on the order of 5 cm-1 are deduced for a single QD sheet.

AB - The authors demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at l~1.2 micro m with threshold current densities ~ 100 A/cm2. Maximum modal gains on the order of 5 cm-1 are deduced for a single QD sheet.

M3 - Article

SN - 0951-3248

VL - 166

SP - 273

EP - 276

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

IS - Compound Semiconductors 1999

ER -

Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

Abstract

Fingerprint

Cite this