LOD-FDTD method for physical simulation of semiconductor devices

R. Mirzavand, A. Abdipour, W.H.A. Schilders, G. Moradi, M. Movahhedi

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

This paper describes a locally one-dimensional finite-difference time domain method for the two-dimensional time-dependent simulation of semiconductor devices. This approach leads to significant reduction of the semiconductor simulation time. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional approach. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper.
Original languageEnglish
Title of host publicationProceedings of the International Conference on Microwave and Millimeter Wave Technology (ICMMT'10, Chengdu, China, May 8-11, 2010)
PublisherInstitute of Electrical and Electronics Engineers
Pages1321-1324
ISBN (Print)978-1-4244-5705-2
DOIs
Publication statusPublished - 2010

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