This paper describes a locally one-dimensional finite-difference time domain method for the two-dimensional time-dependent simulation of semiconductor devices. This approach leads to significant reduction of the semiconductor simulation time. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional approach. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper.
|Title of host publication||Proceedings of the International Conference on Microwave and Millimeter Wave Technology (ICMMT'10, Chengdu, China, May 8-11, 2010)|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2010|