Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors

A. Andringa, W.S.C. Roelofs, M. Thelakkat, M. Kemerink, D.M. Leeuw, de

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)
136 Downloads (Pure)

Abstract

Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO2 field-effect sensors.
Original languageEnglish
Article number153302
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Volume101
Issue number15
DOIs
Publication statusPublished - 2012

Fingerprint Dive into the research topics of 'Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors'. Together they form a unique fingerprint.

Cite this