Local structure and electronic properties of BaTaO2N with perovskite-type structure

C.M. Fang, G.A. Wijs, de, E. Orhan, G. With, de, R.A. Groot, de, H.T.J.M. Hintzen, R. Marchand

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Abstract

First-principles calcn. based on d.-functional theory in the pseudo-potential approach were performed for the total energy and crystal structure of BaTaO2N. The calcns. indicate a random occupation of the anionic positions by O and N in a cubic structure, in agreement with neutron diffraction measurements and IR spectra. The local symmetry in the crystal is broken, maintaining a space group Pm.hivin.3m, as used in structure refinement, which represents only the statistically averaged result. The calcns. also indicate displacive disordering in the crystal. The av. Ta-N distance is smaller (2.003 A), while the av. Ta-O distance becomes larger (2.089 A). The local relaxation of the atoms has an influence on the electronic structure, esp. on the energy gap. BaTaO2N is a semiconductor with an energy gap of .apprx.0.5 eV. The upper part of the valence band is dominated by N 2p states, while O 2p states are mainly in the lower part. The conduction band is dominated by Ta 5d states.
Original languageEnglish
Pages (from-to)281-286
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number2
DOIs
Publication statusPublished - 2003

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