Local stress measurements in laterally oxidized GaAs/AlxGa1-xAs heterostructures by micro-Raman spectroscopy

J.P. Landesman, A. Fiore, J. Nagle, V. Berger, E. Rosencher, P. Puech

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Abstract

Lattice deformation induced in surface GaAs layers by the selective lateral oxidn. of buried AlxGa1-xAs layers was detd. from the energy shift of the GaAs phonon line in Raman spectra excited with a focused laser beam. The procedure included a correction for the laser beam induced heating effects. The surface GaAs layer was found under small tensile stress in the oxidized regions of the samples with respect to the unoxidized regions. The deformation is 8 * 10-4 and is the same, within exptl. error, for heterostructures incorporating pure AlAs layers or Al0.98Ga0.02As. Strong differences in Raman efficiency, as well as in photoluminescence efficiency, were obsd. for different samples, which are discussed in terms of the GaAs/oxide interface nonradiative recombination efficiency. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)2520-2522
JournalApplied Physics Letters
Volume71
Issue number17
DOIs
Publication statusPublished - 1997

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