Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals

H.H.J.E. Kicken, P.F.A. Alkemade, R.W. Heijden, van der, F. Karouta, R. Nötzel, E.W.J.M. Drift, van der, H.W.M. Salemink

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blueshifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning.
Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherInstitute of Electrical and Electronics Engineers
Pages31-34
ISBN (Print)9781424434336
DOIs
Publication statusPublished - 2009
Eventconference; IPRM '09. IEEE International Conference; 2009-05-10; 2009-05-14 -
Duration: 10 May 200914 May 2009

Conference

Conferenceconference; IPRM '09. IEEE International Conference; 2009-05-10; 2009-05-14
Period10/05/0914/05/09
OtherIPRM '09. IEEE International Conference

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