Lightly N2O nitrided dielectrics grown in a conventional furnace for E2PROM and 0.25 μm CMOS

H. G. Pomp; P. H. Woerlee; R. Woltjer; G. Paulzen; H. Lifka; A. E.T. Kuiper; J. Solo de Zaldivar; S. Vecsernyès

doi:10.1109/IEDM.1993.347310

Lightly N₂O nitrided dielectrics grown in a conventional furnace for E²PROM and 0.25 μm CMOS

H. G. Pomp, P. H. Woerlee, R. Woltjer, G. Paulzen, H. Lifka, A. E.T. Kuiper, J. Solo de Zaldivar, S. Vecsernyès

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

For deep-submicron CMOS transistors and FLOTOX E²PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N₂O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting
Publisher	Institute of Electrical and Electronics Engineers
Pages	463-466
Number of pages	4
ISBN (Print)	0780314506
DOIs	https://doi.org/10.1109/IEDM.1993.347310
Publication status	Published - 1 Dec 1993
Externally published	Yes
Event	1993 IEEE International Electron Devices Meeting, IEDM 1993 - Washington, United States Duration: 5 Dec 1993 → 8 Dec 1993

Conference

Conference	1993 IEEE International Electron Devices Meeting, IEDM 1993
Country/Territory	United States
City	Washington
Period	5/12/93 → 8/12/93

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10.1109/IEDM.1993.347310

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Pomp, H. G., Woerlee, P. H., Woltjer, R., Paulzen, G., Lifka, H., Kuiper, A. E. T., Solo de Zaldivar, J., & Vecsernyès, S. (1993). Lightly N₂O nitrided dielectrics grown in a conventional furnace for E²PROM and 0.25 μm CMOS. In Technical Digest - International Electron Devices Meeting (pp. 463-466). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.1993.347310

@inproceedings{29a781a44c41476586e381db93b4260e,

title = "Lightly N2O nitrided dielectrics grown in a conventional furnace for E2PROM and 0.25 μm CMOS",

abstract = "For deep-submicron CMOS transistors and FLOTOX E2PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N2O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.",

author = "Pomp, {H. G.} and Woerlee, {P. H.} and R. Woltjer and G. Paulzen and H. Lifka and Kuiper, {A. E.T.} and {Solo de Zaldivar}, J. and S. Vecserny{\`e}s",

year = "1993",

month = dec,

day = "1",

doi = "10.1109/IEDM.1993.347310",

language = "English",

isbn = "0780314506",

pages = "463--466",

booktitle = "Technical Digest - International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1993 IEEE International Electron Devices Meeting, IEDM 1993 ; Conference date: 05-12-1993 Through 08-12-1993",

}

Pomp, HG, Woerlee, PH, Woltjer, R, Paulzen, G, Lifka, H, Kuiper, AET, Solo de Zaldivar, J & Vecsernyès, S 1993, Lightly N₂O nitrided dielectrics grown in a conventional furnace for E²PROM and 0.25 μm CMOS. in Technical Digest - International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, pp. 463-466, 1993 IEEE International Electron Devices Meeting, IEDM 1993, Washington, Washington, United States, 5/12/93. https://doi.org/10.1109/IEDM.1993.347310

Lightly N₂O nitrided dielectrics grown in a conventional furnace for E²PROM and 0.25 μm CMOS. / Pomp, H. G.; Woerlee, P. H.; Woltjer, R. et al.
Technical Digest - International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, 1993. p. 463-466.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Lightly N2O nitrided dielectrics grown in a conventional furnace for E2PROM and 0.25 μm CMOS

AU - Pomp, H. G.

AU - Woerlee, P. H.

AU - Woltjer, R.

AU - Paulzen, G.

AU - Lifka, H.

AU - Kuiper, A. E.T.

AU - Solo de Zaldivar, J.

AU - Vecsernyès, S.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - For deep-submicron CMOS transistors and FLOTOX E2PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N2O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.

AB - For deep-submicron CMOS transistors and FLOTOX E2PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N2O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.

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U2 - 10.1109/IEDM.1993.347310

DO - 10.1109/IEDM.1993.347310

M3 - Conference contribution

AN - SCOPUS:0027814117

SN - 0780314506

SP - 463

EP - 466

BT - Technical Digest - International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers

T2 - 1993 IEEE International Electron Devices Meeting, IEDM 1993

Y2 - 5 December 1993 through 8 December 1993

ER -

Lightly N₂O nitrided dielectrics grown in a conventional furnace for E²PROM and 0.25 μm CMOS

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