Lightly N2O nitrided dielectrics grown in a conventional furnace for E2PROM and 0.25 μm CMOS

H. G. Pomp, P. H. Woerlee, R. Woltjer, G. Paulzen, H. Lifka, A. E.T. Kuiper, J. Solo de Zaldivar, S. Vecsernyès

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

For deep-submicron CMOS transistors and FLOTOX E2PROM devices a considerable improvement in reliability and performance can be achieved when nitrided dielectrics are used. We developed an N2O nitridation technology for a conventional furnace. Oxidation and nitridation are done in one run with a two-step and low-thermal budget processing to grow a dielectric layer with a thickness of 6-10 nm.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherInstitute of Electrical and Electronics Engineers
Pages463-466
Number of pages4
ISBN (Print)0780314506
DOIs
Publication statusPublished - 1 Dec 1993
Externally publishedYes
Event1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 5 Dec 19938 Dec 1993

Conference

Conference1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period5/12/938/12/93

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