Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort, Y. Ren, A. Dijkstra, E. Fadaly, M. A. Verheijen, G. Reithmaier, D. Busse, S. Botti, J. Finley, E. P.A.M. Bakkers

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Abstract

Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PublisherOptical Society of America (OSA)
Number of pages2
ISBN (Electronic)9781557528209
DOIs
Publication statusPublished - 1 Jan 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2 Jul 20185 Jul 2018

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
CountrySwitzerland
CityZurich
Period2/07/185/07/18

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