Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort; Y. Ren; A. Dijkstra; E. Fadaly; M. A. Verheijen; G. Reithmaier; D. Busse; S. Botti; J. Finley; E. P.A.M. Bakkers

doi:10.1364/IPRSN.2018.ITu4I.5

Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort, Y. Ren, A. Dijkstra, E. Fadaly, M. A. Verheijen, G. Reithmaier, D. Busse, S. Botti, J. Finley, E. P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

Original language	English
Title of host publication	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Publisher	Optical Society of America (OSA)
Number of pages	2
ISBN (Electronic)	9781557528209
DOIs	https://doi.org/10.1364/IPRSN.2018.ITu4I.5
Publication status	Published - 1 Jan 2018
Event	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland Duration: 2 Jul 2018 → 5 Jul 2018

Conference

Conference	Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Country/Territory	Switzerland
City	Zurich
Period	2/07/18 → 5/07/18

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10.1364/IPRSN.2018.ITu4I.5

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Haverkort, J. E. M., Ren, Y., Dijkstra, A., Fadaly, E., Verheijen, M. A., Reithmaier, G., Busse, D., Botti, S., Finley, J., & Bakkers, E. P. A. M. (2018). Light emission from direct bandgap hexagonal SiGe. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 Article ITu4I.5 Optical Society of America (OSA). https://doi.org/10.1364/IPRSN.2018.ITu4I.5

@inproceedings{f86a82a54c8245889e3c9eee9581906a,

title = "Light emission from direct bandgap hexagonal SiGe",

abstract = "Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.",

author = "Haverkort, {J. E.M.} and Y. Ren and A. Dijkstra and E. Fadaly and Verheijen, {M. A.} and G. Reithmaier and D. Busse and S. Botti and J. Finley and Bakkers, {E. P.A.M.}",

year = "2018",

month = jan,

day = "1",

doi = "10.1364/IPRSN.2018.ITu4I.5",

language = "English",

booktitle = "Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018",

publisher = "Optical Society of America (OSA)",

address = "United States",

note = "Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 ; Conference date: 02-07-2018 Through 05-07-2018",

}

Haverkort, JEM, Ren, Y, Dijkstra, A, Fadaly, E, Verheijen, MA, Reithmaier, G, Busse, D, Botti, S, Finley, J & Bakkers, EPAM 2018, Light emission from direct bandgap hexagonal SiGe. in Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018., ITu4I.5, Optical Society of America (OSA), Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, Switzerland, 2/07/18. https://doi.org/10.1364/IPRSN.2018.ITu4I.5

TY - GEN

T1 - Light emission from direct bandgap hexagonal SiGe

AU - Haverkort, J. E.M.

AU - Ren, Y.

AU - Dijkstra, A.

AU - Fadaly, E.

AU - Verheijen, M. A.

AU - Reithmaier, G.

AU - Busse, D.

AU - Botti, S.

AU - Finley, J.

AU - Bakkers, E. P.A.M.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

AB - Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

UR - http://www.scopus.com/inward/record.url?scp=85051262545&partnerID=8YFLogxK

U2 - 10.1364/IPRSN.2018.ITu4I.5

DO - 10.1364/IPRSN.2018.ITu4I.5

M3 - Conference contribution

AN - SCOPUS:85051262545

BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

PB - Optical Society of America (OSA)

T2 - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

Y2 - 2 July 2018 through 5 July 2018

ER -

Light emission from direct bandgap hexagonal SiGe

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