Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort, Y. Ren, A. Dijkstra, E. Fadaly, M. A. Verheijen, G. Reithmaier, D. Busse, S. Botti, J. Finley, E. P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

LanguageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PublisherOptical Society of America (OSA)
Number of pages2
ISBN (Electronic)9781557528209
DOIs
StatePublished - 1 Jan 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2 Jul 20185 Jul 2018

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
CountrySwitzerland
CityZurich
Period2/07/185/07/18

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Light emission
Energy gap
Spontaneous emission
Semiconductor materials
Crystals

Cite this

Haverkort, J. E. M., Ren, Y., Dijkstra, A., Fadaly, E., Verheijen, M. A., Reithmaier, G., ... Bakkers, E. P. A. M. (2018). Light emission from direct bandgap hexagonal SiGe. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 [ITu4I.5] Optical Society of America (OSA). DOI: 10.1364/IPRSN.2018.ITu4I.5
Haverkort, J. E.M. ; Ren, Y. ; Dijkstra, A. ; Fadaly, E. ; Verheijen, M. A. ; Reithmaier, G. ; Busse, D. ; Botti, S. ; Finley, J. ; Bakkers, E. P.A.M./ Light emission from direct bandgap hexagonal SiGe. Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Optical Society of America (OSA), 2018.
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title = "Light emission from direct bandgap hexagonal SiGe",
abstract = "Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70{\%}. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.",
author = "Haverkort, {J. E.M.} and Y. Ren and A. Dijkstra and E. Fadaly and Verheijen, {M. A.} and G. Reithmaier and D. Busse and S. Botti and J. Finley and Bakkers, {E. P.A.M.}",
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Haverkort, JEM, Ren, Y, Dijkstra, A, Fadaly, E, Verheijen, MA, Reithmaier, G, Busse, D, Botti, S, Finley, J & Bakkers, EPAM 2018, Light emission from direct bandgap hexagonal SiGe. in Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018., ITu4I.5, Optical Society of America (OSA), Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018, Zurich, Switzerland, 2/07/18. DOI: 10.1364/IPRSN.2018.ITu4I.5

Light emission from direct bandgap hexagonal SiGe. / Haverkort, J. E.M.; Ren, Y.; Dijkstra, A.; Fadaly, E.; Verheijen, M. A.; Reithmaier, G.; Busse, D.; Botti, S.; Finley, J.; Bakkers, E. P.A.M.

Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Optical Society of America (OSA), 2018. ITu4I.5.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Light emission from direct bandgap hexagonal SiGe

AU - Haverkort,J. E.M.

AU - Ren,Y.

AU - Dijkstra,A.

AU - Fadaly,E.

AU - Verheijen,M. A.

AU - Reithmaier,G.

AU - Busse,D.

AU - Botti,S.

AU - Finley,J.

AU - Bakkers,E. P.A.M.

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N2 - Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

AB - Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

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BT - Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018

PB - Optical Society of America (OSA)

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Haverkort JEM, Ren Y, Dijkstra A, Fadaly E, Verheijen MA, Reithmaier G et al. Light emission from direct bandgap hexagonal SiGe. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018. Optical Society of America (OSA). 2018. ITu4I.5. Available from, DOI: 10.1364/IPRSN.2018.ITu4I.5