Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III-V/silicon-on-insulator heterogeneous integration

G. Roelkens, L. Liu, D. Thourhout, Van, R.G.F. Baets, R. Nötzel, F. Raineri, I. Sagnes, G. Beaudoin, R. Raj

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Abstract

The heterogeneous integration of a III–V thin film on top of a silicon-on-insulator (SOI) optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene (DVS-BCB) die-to-wafer bonding is demonstrated, thereby achieving light emission and enhanced nonlinearity in ultracompact SOI cavities. This approach requires ultrathin DVS-BCB bonding layers to allow the highly confined optical mode to overlap with the bonded III–V film. The transfer of sub-100-nm III–V layers using a 65 nm DVS-BCB bonding layer onto SOI racetrack resonator structures is demonstrated. Spontaneous emission coupled to a SOI bus waveguide, spectrally centered around the resonator resonances, is observed by optically pumping the III–V layer. Strong carrier-induced nonlinearities are observed in the transmission characteristics of the III–V/SOI resonator structure. The all-optical control of an optical signal in these III–V/SOI resonators is demonstrated.
Original languageEnglish
Article number033117
Pages (from-to)033117-1/7
Number of pages7
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - 2008

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