Leveling and rebuilding : an approach to improve the uniformity of (In,Ga)As quantum dots

Q. Gong; R. Nötzel; G.J. Hamhuis; T.J. Eijkemans; J.H. Wolter

doi:10.1063/1.1506780

Leveling and rebuilding : an approach to improve the uniformity of (In,Ga)As quantum dots

Q. Gong
, R. Nötzel
, G.J. Hamhuis
, T.J. Eijkemans
, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

18 Citations (Scopus)

269 Downloads (Pure)

Abstract

We report on an approach to improve the uniformity of a single layer of (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept of our approach is to level and rebuild the (In,Ga)As QDs during insertion of a short period GaAs/InAs superlattice between the (In,Ga)As QD layer and the GaAs capping layer. For optimized layer thickness and number of superlattice periods this process results in uniform (In,Ga)As QDs with narrow photoluminescence line width of 20 meV at 4.5 K

Original language	English
Pages (from-to)	1887-1889
Journal	Applied Physics Letters
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.1506780
Publication status	Published - 2002

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abstract = "We report on an approach to improve the uniformity of a single layer of (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept of our approach is to level and rebuild the (In,Ga)As QDs during insertion of a short period GaAs/InAs superlattice between the (In,Ga)As QD layer and the GaAs capping layer. For optimized layer thickness and number of superlattice periods this process results in uniform (In,Ga)As QDs with narrow photoluminescence line width of 20 meV at 4.5 K",

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AU - Gong, Q.

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AU - Hamhuis, G.J.

AU - Eijkemans, T.J.

AU - Wolter, J.H.

PY - 2002

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AB - We report on an approach to improve the uniformity of a single layer of (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept of our approach is to level and rebuild the (In,Ga)As QDs during insertion of a short period GaAs/InAs superlattice between the (In,Ga)As QD layer and the GaAs capping layer. For optimized layer thickness and number of superlattice periods this process results in uniform (In,Ga)As QDs with narrow photoluminescence line width of 20 meV at 4.5 K

U2 - 10.1063/1.1506780

DO - 10.1063/1.1506780

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Leveling and rebuilding : an approach to improve the uniformity of (In,Ga)As quantum dots

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