Leis study of ald WNXCy growth on dielectric layers

M. S.H. Stokhof, W. M. Li, M. De Ridder, H. Sprey, S. Haukka, H. Brongersma

    Research output: Contribution to journalConference articleAcademicpeer-review

    5 Citations (Scopus)

    Abstract

    The required thickness for closure of WNxCy layers deposited with the Atomic Layer Deposition (ALD) technique on Plasma Enhanced CVD SiOx and. Aurora® low-k dielectric was investigated using Low Energy Ion Scattering Spectroscopy (LEIS). This analysis technique has proven to be very surface sensitive and uniquely suited to determine closure of deposited layers with atomic precision. It was shown that the WN xCy layer closes around 40 ALD deposition cycles, setting the upper thickness limit for closure at 3.2 nm. This thickness is in line with the requirements for copper diffusion barriers for the metallization of Si-devices for 45 nm node and beyond. copyright The Electrochemical Society.

    Original languageEnglish
    Pages (from-to)71-77
    Number of pages7
    JournalECS Transactions
    Volume1
    Issue number10
    DOIs
    Publication statusPublished - 2006
    EventAtomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
    Duration: 16 Oct 200521 Oct 2005

    Bibliographical note

    Copyright:
    Copyright 2011 Elsevier B.V., All rights reserved.

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