Leis study of ald WNXCy growth on dielectric layers

M.S.H. Stokhof; W.M. Li; M. de Ridder; H. Sprey; S. Haukka; H. Brongersma

doi:10.1149/1.2209332

Leis study of ald WN_XC_y growth on dielectric layers

M.S.H. Stokhof, W.M. Li, M. de Ridder, H. Sprey, S. Haukka, H. Brongersma

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The required thickness for closure of WN_xC_y layers deposited with the Atomic Layer Deposition (ALD) technique on Plasma Enhanced CVD SiO_x and. Aurora® low-k dielectric was investigated using Low Energy Ion Scattering Spectroscopy (LEIS). This analysis technique has proven to be very surface sensitive and uniquely suited to determine closure of deposited layers with atomic precision. It was shown that the WN _xC_y layer closes around 40 ALD deposition cycles, setting the upper thickness limit for closure at 3.2 nm. This thickness is in line with the requirements for copper diffusion barriers for the metallization of Si-devices for 45 nm node and beyond. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	71-77
Number of pages	7
Journal	ECS Transactions
Volume	1
Issue number	10
DOIs	https://doi.org/10.1149/1.2209332
Publication status	Published - 2006
Event	Atomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, United States Duration: 16 Oct 2005 → 21 Oct 2005

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title = "Leis study of ald WNXCy growth on dielectric layers",

abstract = "The required thickness for closure of WNxCy layers deposited with the Atomic Layer Deposition (ALD) technique on Plasma Enhanced CVD SiOx and. Aurora{\textregistered} low-k dielectric was investigated using Low Energy Ion Scattering Spectroscopy (LEIS). This analysis technique has proven to be very surface sensitive and uniquely suited to determine closure of deposited layers with atomic precision. It was shown that the WN xCy layer closes around 40 ALD deposition cycles, setting the upper thickness limit for closure at 3.2 nm. This thickness is in line with the requirements for copper diffusion barriers for the metallization of Si-devices for 45 nm node and beyond. copyright The Electrochemical Society.",

author = "M.S.H. Stokhof and W.M. Li and {de Ridder}, M. and H. Sprey and S. Haukka and H. Brongersma",

year = "2006",

doi = "10.1149/1.2209332",

language = "English",

volume = "1",

pages = "71--77",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

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note = "Atomic Layer Deposition - 208th Electrochemical Society Meeting ; Conference date: 16-10-2005 Through 21-10-2005",

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TY - JOUR

T1 - Leis study of ald WNXCy growth on dielectric layers

AU - Stokhof, M.S.H.

AU - Li, W.M.

AU - de Ridder, M.

AU - Sprey, H.

AU - Haukka, S.

AU - Brongersma, H.

PY - 2006

Y1 - 2006

N2 - The required thickness for closure of WNxCy layers deposited with the Atomic Layer Deposition (ALD) technique on Plasma Enhanced CVD SiOx and. Aurora® low-k dielectric was investigated using Low Energy Ion Scattering Spectroscopy (LEIS). This analysis technique has proven to be very surface sensitive and uniquely suited to determine closure of deposited layers with atomic precision. It was shown that the WN xCy layer closes around 40 ALD deposition cycles, setting the upper thickness limit for closure at 3.2 nm. This thickness is in line with the requirements for copper diffusion barriers for the metallization of Si-devices for 45 nm node and beyond. copyright The Electrochemical Society.

AB - The required thickness for closure of WNxCy layers deposited with the Atomic Layer Deposition (ALD) technique on Plasma Enhanced CVD SiOx and. Aurora® low-k dielectric was investigated using Low Energy Ion Scattering Spectroscopy (LEIS). This analysis technique has proven to be very surface sensitive and uniquely suited to determine closure of deposited layers with atomic precision. It was shown that the WN xCy layer closes around 40 ALD deposition cycles, setting the upper thickness limit for closure at 3.2 nm. This thickness is in line with the requirements for copper diffusion barriers for the metallization of Si-devices for 45 nm node and beyond. copyright The Electrochemical Society.

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U2 - 10.1149/1.2209332

DO - 10.1149/1.2209332

M3 - Conference article

AN - SCOPUS:33846849609

SN - 1938-5862

VL - 1

SP - 71

EP - 77

JO - ECS Transactions

JF - ECS Transactions

IS - 10

T2 - Atomic Layer Deposition - 208th Electrochemical Society Meeting

Y2 - 16 October 2005 through 21 October 2005

ER -

Leis study of ald WN_XC_y growth on dielectric layers

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