The required thickness for closure of WNxCy layers deposited with the Atomic Layer Deposition (ALD) technique on Plasma Enhanced CVD SiOx and. Aurora® low-k dielectric was investigated using Low Energy Ion Scattering Spectroscopy (LEIS). This analysis technique has proven to be very surface sensitive and uniquely suited to determine closure of deposited layers with atomic precision. It was shown that the WN xCy layer closes around 40 ALD deposition cycles, setting the upper thickness limit for closure at 3.2 nm. This thickness is in line with the requirements for copper diffusion barriers for the metallization of Si-devices for 45 nm node and beyond. copyright The Electrochemical Society.
|Number of pages||7|
|Publication status||Published - 2006|
|Event||Atomic Layer Deposition - 208th Electrochemical Society Meeting - Los Angeles, CA, United States|
Duration: 16 Oct 2005 → 21 Oct 2005