Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

M. Tapajna; K. Husekova; K. Frohlich; E. Dobrocka; F. Roozeboom

doi:10.1109/ASDAM.2006.331144

Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

M. Tapajna
, K. Husekova
, K. Frohlich
, E. Dobrocka
, F. Roozeboom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode

Original language	English
Title of host publication	2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006
Editors	J. Breza, D. Donoval, E. Vavrinsky
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers
Pages	21-24
ISBN (Print)	1-4244-0369-0
DOIs	https://doi.org/10.1109/ASDAM.2006.331144
Publication status	Published - 2006
Event	conference; ASDAM 2006 - Duration: 1 Jan 2006 → …

Conference

Conference	conference; ASDAM 2006
Period	1/01/06 → …
Other	ASDAM 2006

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10.1109/ASDAM.2006.331144

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Tapajna, M., Husekova, K., Frohlich, K., Dobrocka, E., & Roozeboom, F. (2006). Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In J. Breza, D. Donoval, & E. Vavrinsky (Eds.), 2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006 (pp. 21-24). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ASDAM.2006.331144

Tapajna, M. ; Husekova, K. ; Frohlich, K. et al. / Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. 2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006. editor / J. Breza ; D. Donoval ; E. Vavrinsky. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers, 2006. pp. 21-24

@inproceedings{7b378de800ab46149b4146d321efb3b2,

title = "Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode",

abstract = "The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode",

author = "M. Tapajna and K. Husekova and K. Frohlich and E. Dobrocka and F. Roozeboom",

year = "2006",

doi = "10.1109/ASDAM.2006.331144",

language = "English",

isbn = "1-4244-0369-0",

pages = "21--24",

editor = "J. Breza and D. Donoval and E. Vavrinsky",

booktitle = "2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "conference; ASDAM 2006 ; Conference date: 01-01-2006",

}

Tapajna, M, Husekova, K, Frohlich, K, Dobrocka, E & Roozeboom, F 2006, Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. in J Breza, D Donoval & E Vavrinsky (eds), 2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006. Institute of Electrical and Electronics Engineers, Piscataway, NJ, USA, pp. 21-24, conference; ASDAM 2006, 1/01/06. https://doi.org/10.1109/ASDAM.2006.331144

Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. / Tapajna, M.; Husekova, K.; Frohlich, K. et al.
2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006. ed. / J. Breza; D. Donoval; E. Vavrinsky. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers, 2006. p. 21-24.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

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AU - Tapajna, M.

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AU - Dobrocka, E.

AU - Roozeboom, F.

PY - 2006

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N2 - The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode

AB - The authors have studied the leakage characteristics of Ru/Hf/sub x/Si /sub 1-x/O/sub y//Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O/sub 2/. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode

U2 - 10.1109/ASDAM.2006.331144

DO - 10.1109/ASDAM.2006.331144

M3 - Conference contribution

SN - 1-4244-0369-0

SP - 21

EP - 24

BT - 2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006

A2 - Breza, J.

A2 - Donoval, D.

A2 - Vavrinsky, E.

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway, NJ, USA

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ER -

Tapajna M, Husekova K, Frohlich K, Dobrocka E, Roozeboom F. Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode. In Breza J, Donoval D, Vavrinsky E, editors, 2006 Sixth International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle, Slovakia. 16-18 Oct. 2006. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers. 2006. p. 21-24 doi: 10.1109/ASDAM.2006.331144

Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

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