Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip

W. Snoeys (Corresponding author), F. Faccio, M. Burns, M. Campbell, E. Cantatore, N. Carrer, L. Casagrande, A. Cavagnoli, C. Dachs, S. Di Liberto, F. Formenti, A. Giraldo, E. H.M. Heijne, P. Jarron, M. Letheren, A. Marchioro, P. Martinengo, F. Meddi, B. Mikulec, M. MorandoM. Morel, E. Noah, A. Paccagnella, I. Ropotar, S. Saladino, W. Sansen, F. Santopietro, F. Scarlassara, G. F. Segato, P. M. Signe, F. Soramel, L. Vannucci, K. Vleugels

Research output: Contribution to journalConference articleAcademicpeer-review

114 Citations (Scopus)

Abstract

A new pixel readout prototype has been developed at CERN for high-energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 μm CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad-l.7 Mrad depending on the type of radiation. 10 keV X-rays, 60Co gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. Implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed.

Original languageEnglish
Pages (from-to)349-360
Number of pages12
JournalNuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume439
Issue number2
DOIs
Publication statusPublished - 11 Jan 2000
Externally publishedYes
Event1998 8th European Symposium on Semiconductor Detectors - Bavaria, Ger
Duration: 14 Jun 199817 Jun 1998

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