TY - JOUR
T1 - Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
AU - Snoeys, W.
AU - Faccio, F.
AU - Burns, M.
AU - Campbell, M.
AU - Cantatore, E.
AU - Carrer, N.
AU - Casagrande, L.
AU - Cavagnoli, A.
AU - Dachs, C.
AU - Di Liberto, S.
AU - Formenti, F.
AU - Giraldo, A.
AU - Heijne, E. H.M.
AU - Jarron, P.
AU - Letheren, M.
AU - Marchioro, A.
AU - Martinengo, P.
AU - Meddi, F.
AU - Mikulec, B.
AU - Morando, M.
AU - Morel, M.
AU - Noah, E.
AU - Paccagnella, A.
AU - Ropotar, I.
AU - Saladino, S.
AU - Sansen, W.
AU - Santopietro, F.
AU - Scarlassara, F.
AU - Segato, G. F.
AU - Signe, P. M.
AU - Soramel, F.
AU - Vannucci, L.
AU - Vleugels, K.
PY - 2000/1/11
Y1 - 2000/1/11
N2 - A new pixel readout prototype has been developed at CERN for high-energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 μm CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad-l.7 Mrad depending on the type of radiation. 10 keV X-rays, 60Co gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. Implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed.
AB - A new pixel readout prototype has been developed at CERN for high-energy physics applications. This full mixed mode circuit has been implemented in a commercial 0.5 μm CMOS technology. Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. The technique is explained and its effectiveness demonstrated on various irradiation measurements on individual transistors and on the prototype. Circuit performance started to degrade only after a total dose of 600 krad-l.7 Mrad depending on the type of radiation. 10 keV X-rays, 60Co gamma-rays, 6.5 MeV protons, and minimum ionizing particles were used. Implications of this layout approach on the circuit design and perspectives for even deeper submicron technologies are discussed.
UR - http://www.scopus.com/inward/record.url?scp=17944387744&partnerID=8YFLogxK
U2 - 10.1016/S0168-9002(99)00899-2
DO - 10.1016/S0168-9002(99)00899-2
M3 - Conference article
AN - SCOPUS:17944387744
VL - 439
SP - 349
EP - 360
JO - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
SN - 0168-9002
IS - 2
T2 - 1998 8th European Symposium on Semiconductor Detectors
Y2 - 14 June 1998 through 17 June 1998
ER -