Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

Chengmin Li; Renju Zheng; Wuhua Li; Huan Yang; Xiangning He; Weifeng Hu

doi:10.1109/WiPDAAsia.2018.8734562

Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

Chengmin Li, Renju Zheng, Wuhua Li, Huan Yang, Xiangning He, Weifeng Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

A rated 9. 6kV, 450A half-bridge module composed of eight series-connected 1. 2kV SiC power MOSFETs is constructed. The key layout considerations in terms of the electrical, thermal and insulation issues are specially addressed from the application perspective. At first, the influence of the parasitic parameters and temperature variation on voltage imbalance of the series connected devices is analyzed briefly to guide the design of the layout. Then split heatsink scheme is adopted to enable reliable insulation. Meanwhile a balanced liquid cooling system is designed and verified at 180 Box operation. Afterwards the laminated busbar with a 62% stray inductance reduction compared with discrete busbar is proposed. Finally, an optimized layout of the snubber circuit is demonstrated with facilitated voltage balance benefit. The proposed module functions as a single SiC 9.6kV/450A half bridge module and can be adopted in the medium voltage converters flexibly.

Original language	English
Title of host publication	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Publisher	Institute of Electrical and Electronics Engineers
Pages	199-204
Number of pages	6
ISBN (Electronic)	978-1-5386-4392-1
DOIs	https://doi.org/10.1109/WiPDAAsia.2018.8734562
Publication status	Published - 13 Jun 2019
Externally published	Yes
Event	1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China Duration: 16 May 2018 → 18 May 2018

Conference

Conference	1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Country/Territory	China
City	Xi'an
Period	16/05/18 → 18/05/18

Funding

This work is sponsored by the National Nature Science Foundations of China (51490682, 51677166) and State Grid Jiangshu Electric Power program (J2017127).

Keywords

laminated busbar
layout design
medium voltage converters
series connections of SiC MOSFETs

Access to Document

10.1109/WiPDAAsia.2018.8734562

Cite this

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title = "Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications",

abstract = "A rated 9. 6kV, 450A half-bridge module composed of eight series-connected 1. 2kV SiC power MOSFETs is constructed. The key layout considerations in terms of the electrical, thermal and insulation issues are specially addressed from the application perspective. At first, the influence of the parasitic parameters and temperature variation on voltage imbalance of the series connected devices is analyzed briefly to guide the design of the layout. Then split heatsink scheme is adopted to enable reliable insulation. Meanwhile a balanced liquid cooling system is designed and verified at 180 Box operation. Afterwards the laminated busbar with a 62% stray inductance reduction compared with discrete busbar is proposed. Finally, an optimized layout of the snubber circuit is demonstrated with facilitated voltage balance benefit. The proposed module functions as a single SiC 9.6kV/450A half bridge module and can be adopted in the medium voltage converters flexibly.",

keywords = "laminated busbar, layout design, medium voltage converters, series connections of SiC MOSFETs",

author = "Chengmin Li and Renju Zheng and Wuhua Li and Huan Yang and Xiangning He and Weifeng Hu",

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doi = "10.1109/WiPDAAsia.2018.8734562",

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booktitle = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018",

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Li, C, Zheng, R, Li, W, Yang, H, He, X & Hu, W 2019, Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734562, Institute of Electrical and Electronics Engineers, pp. 199-204, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734562

Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications. / Li, Chengmin; Zheng, Renju; Li, Wuhua et al.
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers, 2019. p. 199-204 8734562.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

AU - Li, Chengmin

AU - Zheng, Renju

AU - Li, Wuhua

AU - Yang, Huan

AU - He, Xiangning

AU - Hu, Weifeng

PY - 2019/6/13

Y1 - 2019/6/13

N2 - A rated 9. 6kV, 450A half-bridge module composed of eight series-connected 1. 2kV SiC power MOSFETs is constructed. The key layout considerations in terms of the electrical, thermal and insulation issues are specially addressed from the application perspective. At first, the influence of the parasitic parameters and temperature variation on voltage imbalance of the series connected devices is analyzed briefly to guide the design of the layout. Then split heatsink scheme is adopted to enable reliable insulation. Meanwhile a balanced liquid cooling system is designed and verified at 180 Box operation. Afterwards the laminated busbar with a 62% stray inductance reduction compared with discrete busbar is proposed. Finally, an optimized layout of the snubber circuit is demonstrated with facilitated voltage balance benefit. The proposed module functions as a single SiC 9.6kV/450A half bridge module and can be adopted in the medium voltage converters flexibly.

AB - A rated 9. 6kV, 450A half-bridge module composed of eight series-connected 1. 2kV SiC power MOSFETs is constructed. The key layout considerations in terms of the electrical, thermal and insulation issues are specially addressed from the application perspective. At first, the influence of the parasitic parameters and temperature variation on voltage imbalance of the series connected devices is analyzed briefly to guide the design of the layout. Then split heatsink scheme is adopted to enable reliable insulation. Meanwhile a balanced liquid cooling system is designed and verified at 180 Box operation. Afterwards the laminated busbar with a 62% stray inductance reduction compared with discrete busbar is proposed. Finally, an optimized layout of the snubber circuit is demonstrated with facilitated voltage balance benefit. The proposed module functions as a single SiC 9.6kV/450A half bridge module and can be adopted in the medium voltage converters flexibly.

KW - laminated busbar

KW - layout design

KW - medium voltage converters

KW - series connections of SiC MOSFETs

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ER -

Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

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