Lattice deformation in InAs/GaAs superlattices characterized by MeV ion channeling

L.J.M. Selen, L.J. IJzendoorn, van, F.J.J. Janssen, M.J.A. Voigt, de, P.J.M. Smulders

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    Abstract

    Axial and planar MeV ion-channeling experiments are performed on a InAs/GaAs superlattice with ten coherent buried InAs nanofilms in GaAs. We have measured a step in the channeled Rutherford backscattering spectra, which depends on the incidence angle of the ions. With Monte Carlo simulations, the average tetragonal distortion in the nanofilms can be determined from the axial channeling measurements, although the separate contributions of each individual nanofilm cannot be resolved in the measured spectra. Planar channeling measurements show a higher step, but a detailed resemblance between measurements and simulations cannot be achieved.
    Original languageEnglish
    Article number245319
    Pages (from-to)245319-1/6
    JournalPhysical Review B
    Volume64
    Issue number24
    DOIs
    Publication statusPublished - 2001

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