Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids

J. Yuan; H. Wang; R.P.J. Veldhoven, van; R. Nötzel

Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids

J. Yuan
, H. Wang
, R.P.J. Veldhoven, van
, R. Nötzel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Lateral arrangements of size and number controlled InAs quantum dots (QDs) on truncated InP (100) nanopyramids grown by selective area metalorganic vapor-phase epitaxy (MOVPE) are reported. The QDs nucleate on high-indexfacets on pyramids top allowing precise position and distribution control. The size and shape of QDs are related to As/P exchange determined by the growth temperature, as demonstrated for circular-based pyramids. The QD number is controlled by both the size of the highindex facets (governed by pyramids top area) and As/P exchange (governed by growth temperature). Sharp emission peaks from individual QDs are observed around 1.55 pm.

Original language	English
Title of host publication	Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands
Editors	J. Pozo, M. Mortensen, P. Urbach, X. Leijtens, M. Yousefi
Place of Publication	Delft
Publisher	TNO
Pages	109-112
ISBN (Print)	978-90-78314-15-8
Publication status	Published - 2010

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Yuan, J., Wang, H., Veldhoven, van, R. P. J., & Nötzel, R. (2010). Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids. In J. Pozo, M. Mortensen, P. Urbach, X. Leijtens, & M. Yousefi (Eds.), Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands (pp. 109-112). TNO.

Yuan, J. ; Wang, H. ; Veldhoven, van, R.P.J. et al. / Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids. Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands. editor / J. Pozo ; M. Mortensen ; P. Urbach ; X. Leijtens ; M. Yousefi. Delft : TNO, 2010. pp. 109-112

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title = "Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids",

abstract = "Lateral arrangements of size and number controlled InAs quantum dots (QDs) on truncated InP (100) nanopyramids grown by selective area metalorganic vapor-phase epitaxy (MOVPE) are reported. The QDs nucleate on high-indexfacets on pyramids top allowing precise position and distribution control. The size and shape of QDs are related to As/P exchange determined by the growth temperature, as demonstrated for circular-based pyramids. The QD number is controlled by both the size of the highindex facets (governed by pyramids top area) and As/P exchange (governed by growth temperature). Sharp emission peaks from individual QDs are observed around 1.55 pm.",

author = "J. Yuan and H. Wang and \{Veldhoven, van\}, R.P.J. and R. N{\"o}tzel",

year = "2010",

language = "English",

isbn = "978-90-78314-15-8",

pages = "109--112",

editor = "J. Pozo and M. Mortensen and P. Urbach and X. Leijtens and M. Yousefi",

booktitle = "Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands",

publisher = "TNO",

}

Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids. / Yuan, J.; Wang, H.; Veldhoven, van, R.P.J. et al.
Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands. ed. / J. Pozo; M. Mortensen; P. Urbach; X. Leijtens; M. Yousefi. Delft: TNO, 2010. p. 109-112.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids

AU - Yuan, J.

AU - Wang, H.

AU - Veldhoven, van, R.P.J.

AU - Nötzel, R.

PY - 2010

Y1 - 2010

N2 - Lateral arrangements of size and number controlled InAs quantum dots (QDs) on truncated InP (100) nanopyramids grown by selective area metalorganic vapor-phase epitaxy (MOVPE) are reported. The QDs nucleate on high-indexfacets on pyramids top allowing precise position and distribution control. The size and shape of QDs are related to As/P exchange determined by the growth temperature, as demonstrated for circular-based pyramids. The QD number is controlled by both the size of the highindex facets (governed by pyramids top area) and As/P exchange (governed by growth temperature). Sharp emission peaks from individual QDs are observed around 1.55 pm.

AB - Lateral arrangements of size and number controlled InAs quantum dots (QDs) on truncated InP (100) nanopyramids grown by selective area metalorganic vapor-phase epitaxy (MOVPE) are reported. The QDs nucleate on high-indexfacets on pyramids top allowing precise position and distribution control. The size and shape of QDs are related to As/P exchange determined by the growth temperature, as demonstrated for circular-based pyramids. The QD number is controlled by both the size of the highindex facets (governed by pyramids top area) and As/P exchange (governed by growth temperature). Sharp emission peaks from individual QDs are observed around 1.55 pm.

M3 - Conference contribution

SN - 978-90-78314-15-8

SP - 109

EP - 112

BT - Proceedings of the 15th Annual Symposium of the IEEE Photonics Benelux Chapter, 18-19 November 2010, Delft, The Netherlands

A2 - Pozo, J.

A2 - Mortensen, M.

A2 - Urbach, P.

A2 - Leijtens, X.

A2 - Yousefi, M.

PB - TNO

CY - Delft

ER -

Lateral arrangements of size and number controlled 1.55-μm InAs quantum dots on InP nanopyramids

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