Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'Ev, A.O. Kosogov, P. Werner

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    79 Citations (Scopus)
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    Abstract

    We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. We found an anisotropy of the dot spacing in [100] and [110] direction consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the [100] direction and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced from the diffraction peak shape.
    Original languageEnglish
    Pages (from-to)955-957
    Number of pages3
    JournalApplied Physics Letters
    Volume70
    Issue number8
    DOIs
    Publication statusPublished - 1997

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