Laser emission from an InP/InGaAsP thin film epitaxial layer bonded to a Silicon-on-Insulator waveguide circuit was observed. Adhesive bonding using divinyl-tetramethyldisiloxane-benzocyclobutene (DVS-BCB) was used to integrate the InP/InGaAsP epitaxial layers onto the waveguide circuit. Light is coupled from the laser diode into an underlying waveguide using an adiabatic inverted taper approach. 0.9mW optical power was coupled into the SOI waveguide using a 500µm long laser. Besides for use as a laser diode, the same type of devices can be used as a photodetector. 50µm long devices obtained a responsivity of 0.23A/W.
Roelkens, G., Thourhout, Van, D., Baets, R. G. F., Nötzel, R., & Smit, M. K. (2006). Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a silicon-on-insulator waveguide circuit. Optics Express, 14(18), 8154-8159. https://doi.org/10.1364/OE.14.008154