Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

M.H.M. Weert, van; O. Wunnicke; A.L. Roest; T.J. Eijkemans; A.Y. Silov; J.E.M. Haverkort; G.W. Hooft, 't; E.P.A.M. Bakkers

doi:10.1063/1.2168255

Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

M.H.M. Weert, van, O. Wunnicke, A.L. Roest, T.J. Eijkemans, A.Y. Silov, J.E.M. Haverkort, G.W. Hooft, 't, E.P.A.M. Bakkers

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Abstract

We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5¿70 K) and at low excitation intensities (0.5¿10 W/cm2). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70 meV/decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.

Original language	English
Article number	043109
Pages (from-to)	043109-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	4
DOIs	https://doi.org/10.1063/1.2168255
Publication status	Published - 2006

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title = "Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning",

abstract = "We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5¿70 K) and at low excitation intensities (0.5¿10 W/cm2). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70 meV/decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.",

author = "{Weert, van}, M.H.M. and O. Wunnicke and A.L. Roest and T.J. Eijkemans and A.Y. Silov and J.E.M. Haverkort and {Hooft, 't}, G.W. and E.P.A.M. Bakkers",

year = "2006",

doi = "10.1063/1.2168255",

language = "English",

volume = "88",

pages = "043109--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

AU - Weert, van, M.H.M.

AU - Wunnicke, O.

AU - Roest, A.L.

AU - Eijkemans, T.J.

AU - Silov, A.Y.

AU - Haverkort, J.E.M.

AU - Hooft, 't, G.W.

AU - Bakkers, E.P.A.M.

PY - 2006

Y1 - 2006

N2 - We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5¿70 K) and at low excitation intensities (0.5¿10 W/cm2). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70 meV/decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.

AB - We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5¿70 K) and at low excitation intensities (0.5¿10 W/cm2). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70 meV/decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.

U2 - 10.1063/1.2168255

DO - 10.1063/1.2168255

M3 - Article

VL - 88

SP - 043109-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043109

ER -

Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

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