Abstract
A magnetic "spin filter" tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal, is used to create a magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%. ©2002 American Institute of Physics.
| Original language | English |
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| Pages (from-to) | 625-627 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2002 |