Large magnetoresistance in Si:B-SiO2-Al structures

J.J.H.M. Schoonus; J.T. Kohlhepp; H.J.M. Swagten; B. Koopmans

doi:10.1063/1.2832614

Large magnetoresistance in Si:B-SiO2-Al structures

J.J.H.M. Schoonus, J.T. Kohlhepp, H.J.M. Swagten, B. Koopmans

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Abstract

A magnetic-field-dependent resistance change of eight orders of magnitude is obsd. in B-doped Si-SiO2-Al structures. In order to identify the elementary mechanisms governing this phenomenon, the thickness of the oxidic layer, which is used as an interface energy barrier, was varied by changing the exposure time to an O plasma. Next, the chem. compn. was monitored by in situ XPS measurements. From current-voltage measurements, we observe that at low temps., an ultrathin SiO2 layer provides the kinetic energy to trigger an autocatalytic process of impact ionization. A magnetic field suppresses the onset of impact ionization to higher elec. fields, resulting in a large magnetoresistance.

Original language	English
Article number	07F309
Pages (from-to)	07F309-1/3
Journal	Journal of Applied Physics
Volume	103
Issue number	7, Pt. 3
DOIs	https://doi.org/10.1063/1.2832614
Publication status	Published - 2008

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abstract = "A magnetic-field-dependent resistance change of eight orders of magnitude is obsd. in B-doped Si-SiO2-Al structures. In order to identify the elementary mechanisms governing this phenomenon, the thickness of the oxidic layer, which is used as an interface energy barrier, was varied by changing the exposure time to an O plasma. Next, the chem. compn. was monitored by in situ XPS measurements. From current-voltage measurements, we observe that at low temps., an ultrathin SiO2 layer provides the kinetic energy to trigger an autocatalytic process of impact ionization. A magnetic field suppresses the onset of impact ionization to higher elec. fields, resulting in a large magnetoresistance.",

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AU - Schoonus, J.J.H.M.

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AU - Swagten, H.J.M.

AU - Koopmans, B.

PY - 2008

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AB - A magnetic-field-dependent resistance change of eight orders of magnitude is obsd. in B-doped Si-SiO2-Al structures. In order to identify the elementary mechanisms governing this phenomenon, the thickness of the oxidic layer, which is used as an interface energy barrier, was varied by changing the exposure time to an O plasma. Next, the chem. compn. was monitored by in situ XPS measurements. From current-voltage measurements, we observe that at low temps., an ultrathin SiO2 layer provides the kinetic energy to trigger an autocatalytic process of impact ionization. A magnetic field suppresses the onset of impact ionization to higher elec. fields, resulting in a large magnetoresistance.

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M3 - Article

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SP - 07F309-1/3

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7, Pt. 3

M1 - 07F309

ER -

Large magnetoresistance in Si:B-SiO2-Al structures

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