Large low-frequency resistance noise in chemical vapor deposited graphene

A. Pal, A.A. Bol, Arindam Gosh

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We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.
Original languageEnglish
Article number133504
Pages (from-to)1-3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2010


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