Large low-frequency resistance noise in chemical vapor deposited graphene

A. Pal, A.A. Bol, Arindam Gosh

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    Abstract

    We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.
    Original languageEnglish
    Article number133504
    Pages (from-to)1-3
    JournalApplied Physics Letters
    Volume97
    Issue number13
    DOIs
    Publication statusPublished - 2010

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    graphene
    vapors
    low frequencies
    foils
    vapor deposition
    copper
    electric potential
    temperature

    Cite this

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    title = "Large low-frequency resistance noise in chemical vapor deposited graphene",
    abstract = "We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.",
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    year = "2010",
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    language = "English",
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    Large low-frequency resistance noise in chemical vapor deposited graphene. / Pal, A.; Bol, A.A.; Gosh, Arindam.

    In: Applied Physics Letters, Vol. 97, No. 13, 133504, 2010, p. 1-3.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Large low-frequency resistance noise in chemical vapor deposited graphene

    AU - Pal, A.

    AU - Bol, A.A.

    AU - Gosh, Arindam

    PY - 2010

    Y1 - 2010

    N2 - We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

    AB - We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

    U2 - 10.1063/1.3493655

    DO - 10.1063/1.3493655

    M3 - Article

    VL - 97

    SP - 1

    EP - 3

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 13

    M1 - 133504

    ER -