Large field particle beam optics for projection and proximity printing and for maskless lithography

H. Loeschner, G. Stengl, H. Buschbeck, A. Chalupka, G. Lammer, E. Platzgummer, H. Vonach, P.W.H. Jager, de, R. Kaesmaier, A. Ehrmann, S. Hirscher, A. Wolter, A.H. Dietzel, R. Berger, H. Grimm, B.D. Terris, W.H. Bruenger, G. Gross, O. Fortagne, D. AdamM. Boehm, H. Eichhorn, R. Springer, J. Butschke, F. Letzkus, P. Ruchhoeft, J.C. Wolfe

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18 Citations (Scopus)


Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In cooperation with IBM Storage Technology Division, ion projection patterning of magnetic media layers has been demonstrated. With masked ion beam proximity techniques, unique capabilities for lithography on nonplanar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBL) and masked ion beam direct structuring (MIBS) tool with sub-20-nm resolution capability within 88-mm¿ exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume projection maskless lithography (projection-ML2) is discussed. In the case of projection-ML2 there are advantages of using electrons instead of ions. Including gray scaling, an improved concept for a ¿50-nm projection-ML2 system is presented with the potential to meet a throughput of 20 wafers per hour (300 mm).
Original languageEnglish
Pages (from-to)34-48
JournalJournal of Microlithography, Microfabrication and Microsystems
Issue number34
Publication statusPublished - 2003


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