Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

H. Loeschner; G. Stengl; H. Buschbeck; A. Chalupka; G. Lammer; E. Platzgummer; H. Vonach; P.W.H. Jager, de; R. Kaesmaier; A. Ehrmann; S. Hirscher; A. Wolter; A.H. Dietzel; R. Berger; H. Grimm; B.D. Terris; W.H. Bruenger; D. Adam; M. Boehm; H. Eichhorn; R. Springer; J. Butschke; F. Letzkus; P. Ruchhoeft; J.C. Wolfe

doi:10.1117/12.472336

Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

H. Loeschner, G. Stengl, H. Buschbeck, A. Chalupka, G. Lammer, E. Platzgummer, H. Vonach, P.W.H. Jager, de, R. Kaesmaier, A. Ehrmann, S. Hirscher, A. Wolter, A.H. Dietzel, R. Berger, H. Grimm, B.D. Terris, W.H. Bruenger, D. Adam, M. Boehm, H. EichhornR. Springer, J. Butschke, F. Letzkus, P. Ruchhoeft, J.C. Wolfe

Microsystems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.

Original language	English
Title of host publication	Emerging Lithographic Technologies VI, Santa Clara, 2002
Editors	R.L. Engelstad
Place of Publication	Bellingham
Publisher	SPIE
Pages	595-606
DOIs	https://doi.org/10.1117/12.472336
Publication status	Published - 2002

Publication series

Name	Proceedings of SPIE
Volume	4688
ISSN (Print)	0277-786X

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Loeschner, H., Stengl, G., Buschbeck, H., Chalupka, A., Lammer, G., Platzgummer, E., Vonach, H., Jager, de, P. W. H., Kaesmaier, R., Ehrmann, A., Hirscher, S., Wolter, A., Dietzel, A. H., Berger, R., Grimm, H., Terris, B. D., Bruenger, W. H., Adam, D., Boehm, M., ... Wolfe, J. C. (2002). Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2). In R. L. Engelstad (Ed.), Emerging Lithographic Technologies VI, Santa Clara, 2002 (pp. 595-606). (Proceedings of SPIE; Vol. 4688). SPIE. https://doi.org/10.1117/12.472336

@inproceedings{89c8a14fa73646fd821c9bb3a10d313c,

title = "Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)",

abstract = "Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.",

author = "H. Loeschner and G. Stengl and H. Buschbeck and A. Chalupka and G. Lammer and E. Platzgummer and H. Vonach and {Jager, de}, P.W.H. and R. Kaesmaier and A. Ehrmann and S. Hirscher and A. Wolter and A.H. Dietzel and R. Berger and H. Grimm and B.D. Terris and W.H. Bruenger and D. Adam and M. Boehm and H. Eichhorn and R. Springer and J. Butschke and F. Letzkus and P. Ruchhoeft and J.C. Wolfe",

year = "2002",

doi = "10.1117/12.472336",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "595--606",

editor = "R.L. Engelstad",

booktitle = "Emerging Lithographic Technologies VI, Santa Clara, 2002",

address = "United States",

}

Loeschner, H, Stengl, G, Buschbeck, H, Chalupka, A, Lammer, G, Platzgummer, E, Vonach, H, Jager, de, PWH, Kaesmaier, R, Ehrmann, A, Hirscher, S, Wolter, A, Dietzel, AH, Berger, R, Grimm, H, Terris, BD, Bruenger, WH, Adam, D, Boehm, M, Eichhorn, H, Springer, R, Butschke, J, Letzkus, F, Ruchhoeft, P & Wolfe, JC 2002, Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2). in RL Engelstad (ed.), Emerging Lithographic Technologies VI, Santa Clara, 2002. Proceedings of SPIE, vol. 4688, SPIE, Bellingham, pp. 595-606. https://doi.org/10.1117/12.472336

Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2). / Loeschner, H.; Stengl, G.; Buschbeck, H. et al.
Emerging Lithographic Technologies VI, Santa Clara, 2002. ed. / R.L. Engelstad. Bellingham: SPIE, 2002. p. 595-606 (Proceedings of SPIE; Vol. 4688).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

AU - Loeschner, H.

AU - Stengl, G.

AU - Buschbeck, H.

AU - Chalupka, A.

AU - Lammer, G.

AU - Platzgummer, E.

AU - Vonach, H.

AU - Jager, de, P.W.H.

AU - Kaesmaier, R.

AU - Ehrmann, A.

AU - Hirscher, S.

AU - Wolter, A.

AU - Dietzel, A.H.

AU - Berger, R.

AU - Grimm, H.

AU - Terris, B.D.

AU - Bruenger, W.H.

AU - Adam, D.

AU - Boehm, M.

AU - Eichhorn, H.

AU - Springer, R.

AU - Butschke, J.

AU - Letzkus, F.

AU - Ruchhoeft, P.

AU - Wolfe, J.C.

PY - 2002

Y1 - 2002

N2 - Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.

AB - Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.

U2 - 10.1117/12.472336

DO - 10.1117/12.472336

M3 - Conference contribution

T3 - Proceedings of SPIE

SP - 595

EP - 606

BT - Emerging Lithographic Technologies VI, Santa Clara, 2002

A2 - Engelstad, R.L.

PB - SPIE

CY - Bellingham

ER -

Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

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