Abstract
Indium Gallium Zinc Oxide (IGZO) films are deposited using plasma-enhanced spatial Atomic Layer Deposition (sALD) on substrates as large as 32 cm x 35 cm. Excellent uniformity and thickness control leads to high-performing and stable co-planar top-gate self-aligned (SA) thin-film transistors (TFTs), demonstrating the viability of atmospheric spatial ALD as a novel deposition technique for the flat-panel display Industry.
| Original language | English |
|---|---|
| Pages (from-to) | 981-984 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 50 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 2019 |
| Event | SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States Duration: 12 May 2019 → 17 May 2019 |
Funding
The authors would like to thank the process engineers of Hoist Centre's GEN1 R&D (TFT) Pilot Line for the fabrication of the TFT backplanes. This work was financed by the Flexlines project within the Interreg V-programme Flanders-The Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co-financed by the Province of Noord-Brabant, The Netherlands.
Keywords
- IGZO
- Self-aligned TFT
- Semiconductors
- Spatial Atomic Layer Deposition
- TFT Manufacturing
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