Large-area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

IIias Katsouras, Corné Frijters, Paul Poodt, Gerwin Gelinck, Auke Jisk Kronemeijer

Research output: Contribution to journalConference articleAcademicpeer-review

Abstract

Indium Gallium Zinc Oxide (IGZO) films are deposited using plasma-enhanced spatial Atomic Layer Deposition (sALD) on substrates as large as 32 cm x 35 cm. Excellent uniformity and thickness control leads to high-performing and stable co-planar top-gate self-aligned (SA) thin-film transistors (TFTs), demonstrating the viability of atmospheric spatial ALD as a novel deposition technique for the flat-panel display Industry.

Original languageEnglish
Pages (from-to)981-984
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume50
Issue number1
DOIs
Publication statusPublished - 1 Jan 2019
EventSID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States
Duration: 12 May 201917 May 2019

Keywords

  • IGZO
  • Self-aligned TFT
  • Semiconductors
  • Spatial Atomic Layer Deposition
  • TFT Manufacturing

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