Abstract
Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen I glass substrate (320 mm ×00D7; 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 8Sypi QVGA AMOLED display is demonstrated.
Original language | English |
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Pages (from-to) | 169-172 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 48 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2017 |
Event | 2017 SID Symposium, Seminar, and Exhibition - Los Angeles, United States Duration: 21 May 2017 → 26 May 2017 http://www.displayweek.org/2017.aspx |
Keywords
- Active-matrix OLED displays
- Large-area processing
- Soluble metal-oxide semiconductor