Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

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Abstract

The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2D MoS2 thin films on device ready SiO2/Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to few-layered MoS2 has been achieved. Furthermore, uniform films with exceptional conformality over 3D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2D MoS2 and WS2 thin films over a large area which opens up an avenue for their direct integration in future nano- and opto-electronic device applications.
Original languageEnglish
Article number255603
Number of pages12
JournalNanotechnology
Volume31
Issue number25
Early online date12 Feb 2020
DOIs
Publication statusPublished - 3 Apr 2020

Keywords

  • PEALD
  • MoS2
  • patterned growth
  • lateral heterostructures
  • large area

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