Large-area n-Type PERT solar cells featuring rear p+ emitter passivated by ALD Al2O3

Emanuele Cornagliotti, Angel Uruena, Monica Aleman, Aashish Sharma, Loic Tous, Richard Russell, Patrick Choulat, Jia Chen, Joachim John, Michael Haslinger, Filip Duerinckx, Bas Dielissen, Roger Gortzen, Lachlan Black, Jozef Szlufcik

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)


We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al2O3 and PECVD SiOx. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al2O3/SiOx stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm2, provided that the Al2O3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al2O3/SiOx passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and Voc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

Original languageEnglish
Article number7174943
Pages (from-to)1366-1372
Number of pages7
JournalIEEE Journal of Photovoltaics
Issue number5
Publication statusPublished - 1 Sep 2015


  • Atomic layer deposition (ALD) AlO
  • Cu-plating
  • n-PERT cell


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