Abstract
Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]
Original language | English |
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Title of host publication | Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands |
Pages | 06- |
Publication status | Published - 2005 |
Event | 27th International Conference on Phenomena in Ionized Gases (ICPIG 2005) - Eindhoven, Netherlands Duration: 17 Jul 2005 → 22 Jul 2005 |
Conference
Conference | 27th International Conference on Phenomena in Ionized Gases (ICPIG 2005) |
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Abbreviated title | ICPIG 2005 |
Country/Territory | Netherlands |
City | Eindhoven |
Period | 17/07/05 → 22/07/05 |