Langmuir probe measurements in inductively coupled argon and ammonia plasmas

B.J. Kniknie; M.C.M. Sanden, van de; A.J.M. van Erven; R.C.M. Bosch; W.M.M. Kessels

Langmuir probe measurements in inductively coupled argon and ammonia plasmas

B.J. Kniknie, M.C.M. Sanden, van de, A.J.M. van Erven, R.C.M. Bosch, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]

Original language	English
Title of host publication	Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands
Pages	06-
Publication status	Published - 2005
Event	27th International Conference on Phenomena in Ionized Gases (ICPIG 2005) - Eindhoven, Netherlands Duration: 17 Jul 2005 → 22 Jul 2005

Conference

Conference	27th International Conference on Phenomena in Ionized Gases (ICPIG 2005)
Abbreviated title	ICPIG 2005
Country/Territory	Netherlands
City	Eindhoven
Period	17/07/05 → 22/07/05

Cite this

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title = "Langmuir probe measurements in inductively coupled argon and ammonia plasmas",

abstract = "Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]",

author = "B.J. Kniknie and \{Sanden, van de\}, M.C.M. and \{van Erven\}, A.J.M. and R.C.M. Bosch and W.M.M. Kessels",

year = "2005",

language = "English",

pages = "06--",

booktitle = "Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands",

note = "27th International Conference on Phenomena in Ionized Gases (ICPIG 2005), ICPIG 2005 ; Conference date: 17-07-2005 Through 22-07-2005",

}

Kniknie, BJ, Sanden, van de, MCM, van Erven, AJM, Bosch, RCM & Kessels, WMM 2005, Langmuir probe measurements in inductively coupled argon and ammonia plasmas. in Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands. pp. 06-, 27th International Conference on Phenomena in Ionized Gases (ICPIG 2005), Eindhoven, Netherlands, 17/07/05.

Langmuir probe measurements in inductively coupled argon and ammonia plasmas. / Kniknie, B.J.; Sanden, van de, M.C.M.; van Erven, A.J.M. et al.
Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands. 2005. p. 06-.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Langmuir probe measurements in inductively coupled argon and ammonia plasmas

AU - Kniknie, B.J.

AU - Sanden, van de, M.C.M.

AU - van Erven, A.J.M.

AU - Bosch, R.C.M.

AU - Kessels, W.M.M.

PY - 2005

Y1 - 2005

N2 - Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]

AB - Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]

M3 - Conference contribution

SP - 06-

BT - Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands

T2 - 27th International Conference on Phenomena in Ionized Gases (ICPIG 2005)

Y2 - 17 July 2005 through 22 July 2005

ER -

Langmuir probe measurements in inductively coupled argon and ammonia plasmas

Abstract

Conference

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