Langmuir probe measurements in inductively coupled argon and ammonia plasmas

B.J. Kniknie, M.C.M. Sanden, van de, A.J.M. van Erven, R.C.M. Bosch, W.M.M. Kessels

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Abstract

Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]
Original languageEnglish
Title of host publicationProceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands
Pages06-
Publication statusPublished - 2005
Event27th International Conference on Phenomena in Ionized Gases (ICPIG 2005) - Eindhoven, Netherlands
Duration: 17 Jul 200522 Jul 2005

Conference

Conference27th International Conference on Phenomena in Ionized Gases (ICPIG 2005)
Abbreviated titleICPIG 2005
CountryNetherlands
CityEindhoven
Period17/07/0522/07/05

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    Kniknie, B. J., Sanden, van de, M. C. M., van Erven, A. J. M., Bosch, R. C. M., & Kessels, W. M. M. (2005). Langmuir probe measurements in inductively coupled argon and ammonia plasmas. In Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands (pp. 06-)