Abstract
Langmuir probe measurements in Ar and NH3 plasmas are performed to study the uniformity of a plasma source used for deposition of Si nitride layers. Electron d. profiles showed a decreasing uniformity with increasing pressure. Since electrons are responsible for dissocn. and ionization this might result in nonuniform deposition. Future work will be directed to find a relation between these plasma features and grown Si nitride layers. [on SciFinder (R)]
| Original language | English |
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| Title of host publication | Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands |
| Pages | 06- |
| Publication status | Published - 2005 |
| Event | 27th International Conference on Phenomena in Ionized Gases (ICPIG 2005) - Eindhoven, Netherlands Duration: 17 Jul 2005 → 22 Jul 2005 |
Conference
| Conference | 27th International Conference on Phenomena in Ionized Gases (ICPIG 2005) |
|---|---|
| Abbreviated title | ICPIG 2005 |
| Country | Netherlands |
| City | Eindhoven |
| Period | 17/07/05 → 22/07/05 |
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Kniknie, B. J., Sanden, van de, M. C. M., van Erven, A. J. M., Bosch, R. C. M., & Kessels, W. M. M. (2005). Langmuir probe measurements in inductively coupled argon and ammonia plasmas. In Proceedings of the 27th International Conference on Phenomena in Ionized Gases (ICPIG), 17-22 July 2005, Veldhoven, The Netherlands (pp. 06-)