Laminated CeO2/HfO2 high-k gate dielectrics grown by pulsed laser deposition in reducing ambient

K. Karakaya, B. Barcones, A. Zinine, Z. M. Rittersma, P. Graat, J. G.M. van Berkum, M. A. Verheijen, G. Rijnders, D. H.A. Blank

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

CeO2 and HfO2 dielectric layers were deposited in an Ar+(5%)H2 gas mixture by Pulsed Laser Deposition (PLD) on Si (100). A CeO2-Ce2O3 transformation is achieved by deposition in a reducing ambient. It is also shown that in-situ post deposition anneal efficiently oxidizes Ce2O3 layers to CeO 2. The properties of CeO2/HfO2 laminated structures deposited in reducing ambient and compared with binary oxide layers of CeO2 and HfO2. The effect of the layer sequence, individual layer thickness and deposition temperature on the structural and electrical properties of the laminates were investigated. It is found that the layer sequence of the laminates affects the crystallinity of the layers and changes the electrical properties. The amorphous laminate with a CeO2 starting layer with 4 nm physical thickness and an EOT of 2 nm, has the lowest J@Vfb-1 V=1.88 × 10-7 A/cm2. The best EOT-Jg trade off is achieved by the laminated layers with a CeO 2 starting layer deposited at 520°C. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)521-533
Number of pages13
JournalECS Transactions
Volume3
Issue number3
DOIs
Publication statusPublished - 1 Dec 2006
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 29 Oct 20063 Nov 2006

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