Laminated CeO2/HfO2 high-k gate dielectrics grown by pulsed laser deposition in reducing ambient

K. Karakaya; B. Barcones; A. Zinine; Z. M. Rittersma; P. Graat; J. G.M. van Berkum; M. A. Verheijen; G. Rijnders; D. H.A. Blank

doi:10.1149/1.2355739

Laminated CeO₂/HfO₂ high-k gate dielectrics grown by pulsed laser deposition in reducing ambient

K. Karakaya, B. Barcones, A. Zinine, Z. M. Rittersma, P. Graat, J. G.M. van Berkum, M. A. Verheijen, G. Rijnders, D. H.A. Blank

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

CeO₂ and HfO₂ dielectric layers were deposited in an Ar+(5%)H₂ gas mixture by Pulsed Laser Deposition (PLD) on Si (100). A CeO₂-Ce₂O₃ transformation is achieved by deposition in a reducing ambient. It is also shown that in-situ post deposition anneal efficiently oxidizes Ce₂O₃ layers to CeO ₂. The properties of CeO₂/HfO₂ laminated structures deposited in reducing ambient and compared with binary oxide layers of CeO₂ and HfO₂. The effect of the layer sequence, individual layer thickness and deposition temperature on the structural and electrical properties of the laminates were investigated. It is found that the layer sequence of the laminates affects the crystallinity of the layers and changes the electrical properties. The amorphous laminate with a CeO₂ starting layer with 4 nm physical thickness and an EOT of 2 nm, has the lowest J@V_fb-1 V=1.88 × 10^-7 A/cm². The best EOT-J_g trade off is achieved by the laminated layers with a CeO ₂ starting layer deposited at 520°C. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	521-533
Number of pages	13
Journal	ECS Transactions
Volume	3
Issue number	3
DOIs	https://doi.org/10.1149/1.2355739
Publication status	Published - 1 Dec 2006
Event	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

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@article{e0033a1f78104717a82a3e823ff82337,

title = "Laminated CeO2/HfO2 high-k gate dielectrics grown by pulsed laser deposition in reducing ambient",

abstract = "CeO2 and HfO2 dielectric layers were deposited in an Ar+(5%)H2 gas mixture by Pulsed Laser Deposition (PLD) on Si (100). A CeO2-Ce2O3 transformation is achieved by deposition in a reducing ambient. It is also shown that in-situ post deposition anneal efficiently oxidizes Ce2O3 layers to CeO 2. The properties of CeO2/HfO2 laminated structures deposited in reducing ambient and compared with binary oxide layers of CeO2 and HfO2. The effect of the layer sequence, individual layer thickness and deposition temperature on the structural and electrical properties of the laminates were investigated. It is found that the layer sequence of the laminates affects the crystallinity of the layers and changes the electrical properties. The amorphous laminate with a CeO2 starting layer with 4 nm physical thickness and an EOT of 2 nm, has the lowest J@Vfb-1 V=1.88 × 10-7 A/cm2. The best EOT-Jg trade off is achieved by the laminated layers with a CeO 2 starting layer deposited at 520°C. copyright The Electrochemical Society.",

author = "K. Karakaya and B. Barcones and A. Zinine and Rittersma, {Z. M.} and P. Graat and {van Berkum}, {J. G.M.} and Verheijen, {M. A.} and G. Rijnders and Blank, {D. H.A.}",

year = "2006",

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language = "English",

volume = "3",

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journal = "ECS Transactions",

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publisher = "Electrochemical Society, Inc.",

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T1 - Laminated CeO2/HfO2 high-k gate dielectrics grown by pulsed laser deposition in reducing ambient

AU - Karakaya, K.

AU - Barcones, B.

AU - Zinine, A.

AU - Rittersma, Z. M.

AU - Graat, P.

AU - van Berkum, J. G.M.

AU - Verheijen, M. A.

AU - Rijnders, G.

AU - Blank, D. H.A.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - CeO2 and HfO2 dielectric layers were deposited in an Ar+(5%)H2 gas mixture by Pulsed Laser Deposition (PLD) on Si (100). A CeO2-Ce2O3 transformation is achieved by deposition in a reducing ambient. It is also shown that in-situ post deposition anneal efficiently oxidizes Ce2O3 layers to CeO 2. The properties of CeO2/HfO2 laminated structures deposited in reducing ambient and compared with binary oxide layers of CeO2 and HfO2. The effect of the layer sequence, individual layer thickness and deposition temperature on the structural and electrical properties of the laminates were investigated. It is found that the layer sequence of the laminates affects the crystallinity of the layers and changes the electrical properties. The amorphous laminate with a CeO2 starting layer with 4 nm physical thickness and an EOT of 2 nm, has the lowest J@Vfb-1 V=1.88 × 10-7 A/cm2. The best EOT-Jg trade off is achieved by the laminated layers with a CeO 2 starting layer deposited at 520°C. copyright The Electrochemical Society.

AB - CeO2 and HfO2 dielectric layers were deposited in an Ar+(5%)H2 gas mixture by Pulsed Laser Deposition (PLD) on Si (100). A CeO2-Ce2O3 transformation is achieved by deposition in a reducing ambient. It is also shown that in-situ post deposition anneal efficiently oxidizes Ce2O3 layers to CeO 2. The properties of CeO2/HfO2 laminated structures deposited in reducing ambient and compared with binary oxide layers of CeO2 and HfO2. The effect of the layer sequence, individual layer thickness and deposition temperature on the structural and electrical properties of the laminates were investigated. It is found that the layer sequence of the laminates affects the crystallinity of the layers and changes the electrical properties. The amorphous laminate with a CeO2 starting layer with 4 nm physical thickness and an EOT of 2 nm, has the lowest J@Vfb-1 V=1.88 × 10-7 A/cm2. The best EOT-Jg trade off is achieved by the laminated layers with a CeO 2 starting layer deposited at 520°C. copyright The Electrochemical Society.

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U2 - 10.1149/1.2355739

DO - 10.1149/1.2355739

M3 - Conference article

AN - SCOPUS:33846948684

SN - 1938-5862

VL - 3

SP - 521

EP - 533

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JF - ECS Transactions

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T2 - Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Laminated CeO₂/HfO₂ high-k gate dielectrics grown by pulsed laser deposition in reducing ambient

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